T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Avionics • Wideband or narrowband amplifiers Product Features • Frequency: DC to 3.5 GHz • Linear Gain: >15 dB at 3.5 GHz • Operating Voltage: 28 V • Output Power (P3dB): 55 W at 3.5 GHz • Lead-free and RoHS compliant Functional Block Diagram 1 10.992 1.524 2 5.461 Pin # Symbol 1 RF Output 2 RF Input Flange Source .508 Pin Configurations 1.016 General Description The TriQuint T1G4005528-FS is a 55 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. +.000 3.505 -.203 9.652 Ordering Information Material No. 1078974 1079752 Datasheet: Rev D 8/10/2011 © 2011 TriQuint Semiconductor, Inc. –1– Part No. T1G4005528FS T1G4005528FS-EVB1 Description ECCN Packaged part: Flangeless 3.0-3.5 GHz Eval Brd EAR99 EAR99 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® T1G4005528-FS 55W, 28V, DC – 3.5GHz, GaN RF Power Transistor Specifications Absolute Maximum Ratings Sym V+ VI |IG| PD TCH BVosx Parameter Positive Supply Value1 Negative Supply Voltage Range Positive Supply Current1 Gate Supply Current Power Dissipation1 Operating Channel Temperature1 Breakdown Voltage Notes: 1 Absolute maximum ratings at 3 GHz. 2 Absolute maximum ratings are set based on industry recommended standard mean time to failure (MTTF) greater than 1M hours while operating at a maximum case temperature of 85C . Operating at lower maximum case temperatures allows maximum operating voltage to be increased up to a maximum of 40V. Application specific limits for operating voltage, positive supply current, and power dissipation can be determined with engineering guidance from Triquint. Value 28 V - 10 V to 0 V 4.5 A 100 mA 61 W 213 °C 85 V Electrical Specifications Recommended operating conditions apply unless otherwise specified: TA=25 °C DC Characteristics Characteristics Break-Down Voltage Drain Source Gate Quiescent Voltage Gate Threshold Voltage Saturated Drain Current Symbol BVDSX VGS (Q) VGS (th) IDSX Min 85 RF Characteristics Characteristics Typ 120 -3.5 -4.5 16 Max Symbol Unit V V V A Min Load Pull Performance at 3.0 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%) Linear Gain GLIN Output Power at 1 dB Gain Compression P1dB Drain Efficiency at 1 dB Gain Compression DE1dB Power-Added Efficiency at 1 dB Gain Compression PAE1dB Gain at 1dB Compression G1dB Conditions VGS = -8 V, ID = 10 mA VDS = 28 V; IDQ = 0.8 A VDS = 10 V; ID = 40 mA VDS = 5 V; VGS = 0 V Typ Max 17.3 51.3 59.0 57.6 16.3 Unit dB W % % dB Load Pull Performance at 3.5 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%) 17.6 Linear Gain GLIN 55.0 Output Power at 1 dB Gain Compression P1dB 62.1 Drain Efficiency at 1 dB Gain Compression DE1dB 60.7 Power-Added Efficiency at 1 dB Gain Compression PAE1dB 16.6 Gain at 1dB Compression G1dB dB W % % dB Performance at 3.3 GHz in the 3.0 to 3.5 GHz Eval. Board (VDS = 28 V, IDQ = 200 mA; Pulse: 100 µs, 20%) 14.0 15.1 Linear Gain GLIN 55.0 65.6 Output Power P3dB 50.0 52.5 Drain Efficiency at 3 dB Gain Compression DE3dB 45.0 49.3 Power-Added Efficiency at 3 dB Gain Compression PAE3dB 11.0 12.1 Gain at 3dB Compression G3dB dB W % % dB Narrow Band Performance at 3.5 GHz (VDS = 28 V, IDQ = 200 mA, CW at P1dB, applied for 3.5 secs) VSWR 10:1 Impedance Mismatch Ruggedness3 Note: 3VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z. Datasheet: Rev D 8/10/2011 © 2011 TriQuint Semiconductor, Inc. –2– Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Applications • • • • • • • General Purpose RF Power Jammers Military and Civilian Radar Professional and Military radio systems Wideband amplifiers Test instrumentation Avionics Product Features • • • • • Functional Block Diagram Frequency: DC to 6 GHz Output Power (P3dB): 18 W at 6 GHz Linear Gain: >10 dB at 6 GHz Operating Voltage: 28 V Low thermal resistance package 1 2 General Description Pin Configuration The TriQuint T1G6001528-Q3 is a 18 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 μm process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Pin # Symbol 1 2 Flange Vd/RF OUT Vg/RF IN Source Lead-free and RoHS compliant Evaluation Boards are available upon request. Ordering Information Part No. T1G6001528-Q3 T1G6001528-Q3 EVB1 Preliminary Data Sheet: Rev - A 06/14/2011 © 2011 TriQuint Semiconductor, Inc. - 1 of 15- ECCN EAR99 EAR99 Description Packaged Transistor 5-6 GHz Eval Board Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® T1G6001528-Q3 DC – 6 GHz 18 W GaN RF Power Transistor Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Drain Voltage,Vd Gate Voltage,Vg Drain to Gate Voltage, Vd – Vg Drain Current, Id Gate Current, Ig Power Dissipation, Pdiss RF Input Power, CW, T = 25ºC Channel Temperature, Tch Mounting Temperature (30 Seconds) Storage Temperature +40 V -50 to 0 V 80 V 1.5 A -25 to 25 mA 26 W 37 dBm 250 oC 260 oC Vd Idq Id_drive (Under RF Drive) Vg Channel Temperature, Tch -40 to 150 oC Min Typical 28 50 Max Units 30 V mA 1400 mA -3.7 V 200 o C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Absolute maximum ratings at 3 GHz. Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25 ºC, Vd = 28 V, Idq = 50 mA, Vg = -3.7 V Typical. Symbol RF Characteristics Min Load Pull Performance at 3 GHz (VDS=28V, IDQ= 50mA, CW) Linear Gain GLIN Output Power at 3 dB Gain Compression P3dB Drain Efficiency at 3 dB Gain Compression DE3dB Power-Added Efficiency at 3 dB Gain Compression PAE3dB Gain at 3 dB Compression G3dB Load Pull Performance at 6 GHz (VDS=28V, IDQ= 50mA, CW) Linear Gain GLIN Output Power at 3 dB Gain Compression P3dB Drain Efficiency at 3 dB Gain Compression DE3dB Power-Added Efficiency at 3 dB Gain Compression PAE3dB Gain at 3 dB Compression G3dB Performance at 5.4 GHz in the 5-6 GHz Fixture (VDS=28V, IDQ= 50mA, Pulse:100µs 20%) Linear Gain GLIN 9.0 Output Power at 3 dB Gain Compression P3dB 17.8 Drain Efficiency at 3 dB Gain Compression DE3dB 50 Power-Added Efficiency at 3 dB Gain Compression PAE3dB 40 Gain at 3 dB Compression G3dB 6.0 Narrowband Performance at 3.5 GHz (VDS=28V, IDQ= 50mA, CW at P1dB, applied for 3.5 secs) Impedance Mismatch Ruggedness VSWR Typ Max Units 15.0 20.0 60 56 12.5 dB W % % dB 11.5 19.0 60 52 8.5 dB W % % dB 9.5 21.0 58 45 6.5 dB W % % dB 10:1 Note: VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z. Preliminary Data Sheet: Rev - A 06/14/2011 © 2011 TriQuint Semiconductor, Inc. - 2 of 15- Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®