TRIQUINT T1G6001528

T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Applications
• Military radar
• Civilian radar
• Professional and military radio
communications
• Test instrumentation
• Avionics
• Wideband or narrowband amplifiers
Product Features
• Frequency: DC to 3.5 GHz
• Linear Gain: >15 dB at 3.5 GHz
• Operating Voltage: 28 V
• Output Power (P3dB): 55 W at 3.5 GHz
• Lead-free and RoHS compliant
Functional Block Diagram
1
10.992
1.524
2
5.461
Pin #
Symbol
1
RF Output
2 RF Input
Flange
Source
.508
Pin Configurations
1.016
General Description
The TriQuint T1G4005528-FS is a 55 W (P3dB)
discrete GaN on SiC HEMT which operates from
DC to 3.5 GHz. The device is constructed with
TriQuint’s proven 0.25 µm production process,
which features advanced field plate techniques
to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management
costs.
+.000
3.505 -.203
9.652
Ordering Information
Material No.
1078974
1079752 Datasheet: Rev D 8/10/2011
© 2011 TriQuint Semiconductor, Inc.
–1–
Part No.
T1G4005528FS
T1G4005528FS-EVB1
Description
ECCN
Packaged part:
Flangeless
3.0-3.5 GHz
Eval Brd
EAR99
EAR99
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
T1G4005528-FS
55W, 28V, DC – 3.5GHz, GaN RF Power Transistor
Specifications
Absolute Maximum Ratings
Sym
V+
VI
|IG|
PD
TCH
BVosx
Parameter
Positive Supply Value1
Negative Supply Voltage Range
Positive Supply Current1
Gate Supply Current
Power Dissipation1
Operating Channel Temperature1
Breakdown Voltage
Notes:
1
Absolute maximum ratings at 3 GHz.
2
Absolute maximum ratings are set based on industry recommended
standard mean time to failure (MTTF) greater than 1M hours while
operating at a maximum case temperature of 85C . Operating at lower
maximum case temperatures allows maximum operating voltage to
be increased up to a maximum of 40V. Application specific limits for
operating voltage, positive supply current, and power dissipation can
be determined with engineering guidance from Triquint.
Value
28 V
- 10 V to 0 V
4.5 A
100 mA
61 W
213 °C
85 V
Electrical Specifications
Recommended operating conditions apply unless otherwise specified: TA=25 °C
DC Characteristics
Characteristics
Break-Down Voltage Drain Source
Gate Quiescent Voltage
Gate Threshold Voltage
Saturated Drain Current
Symbol
BVDSX
VGS (Q)
VGS (th)
IDSX
Min
85
RF Characteristics
Characteristics
Typ
120
-3.5
-4.5
16
Max
Symbol
Unit
V
V
V
A
Min
Load Pull Performance at 3.0 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%)
Linear Gain
GLIN
Output Power at 1 dB Gain Compression
P1dB
Drain Efficiency at 1 dB Gain Compression
DE1dB
Power-Added Efficiency at 1 dB Gain Compression
PAE1dB
Gain at 1dB Compression
G1dB
Conditions
VGS = -8 V, ID = 10 mA
VDS = 28 V; IDQ = 0.8 A
VDS = 10 V; ID = 40 mA
VDS = 5 V; VGS = 0 V
Typ
Max
17.3
51.3
59.0
57.6
16.3
Unit
dB
W
%
%
dB
Load Pull Performance at 3.5 GHz (VDS = 28 V, IDQ = 200 mA; Pulse: 100µs, 20%)
17.6
Linear Gain
GLIN
55.0
Output Power at 1 dB Gain Compression
P1dB
62.1
Drain Efficiency at 1 dB Gain Compression
DE1dB
60.7
Power-Added Efficiency at 1 dB Gain Compression
PAE1dB
16.6
Gain at 1dB Compression
G1dB
dB
W
%
%
dB
Performance at 3.3 GHz in the 3.0 to 3.5 GHz Eval. Board (VDS = 28 V, IDQ = 200 mA; Pulse: 100 µs, 20%)
14.0
15.1
Linear Gain
GLIN
55.0
65.6
Output Power
P3dB
50.0
52.5
Drain Efficiency at 3 dB Gain Compression
DE3dB
45.0
49.3
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
11.0
12.1
Gain at 3dB Compression
G3dB
dB
W
%
%
dB
Narrow Band Performance at 3.5 GHz (VDS = 28 V, IDQ = 200 mA, CW at P1dB, applied for 3.5 secs)
VSWR
10:1
Impedance Mismatch Ruggedness3
Note: 3VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z.
Datasheet: Rev D 8/10/2011
© 2011 TriQuint Semiconductor, Inc.
–2–
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Applications
•
•
•
•
•
•
•
General Purpose RF Power
Jammers
Military and Civilian Radar
Professional and Military radio systems
Wideband amplifiers
Test instrumentation
Avionics
Product Features
•
•
•
•
•
Functional Block Diagram
Frequency: DC to 6 GHz
Output Power (P3dB): 18 W at 6 GHz
Linear Gain: >10 dB at 6 GHz
Operating Voltage: 28 V
Low thermal resistance package
1
2
General Description
Pin Configuration
The TriQuint T1G6001528-Q3 is a 18 W (P3dB)
discrete GaN on SiC HEMT which operates from DC
to 6 GHz and typically provides >10 dB gain at 6 GHz.
The device is constructed with TriQuint’s proven 0.25
μm process, which features advanced field plate
techniques to optimize power and efficiency at high
drain bias operating conditions. This optimization can
potentially lower system costs in terms of fewer
amplifier line-ups and lower thermal management costs.
Pin #
Symbol
1
2
Flange
Vd/RF OUT
Vg/RF IN
Source
Lead-free and RoHS compliant
Evaluation Boards are available upon request.
Ordering Information
Part No.
T1G6001528-Q3
T1G6001528-Q3 EVB1
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
- 1 of 15-
ECCN
EAR99
EAR99
Description
Packaged Transistor
5-6 GHz Eval Board
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®
T1G6001528-Q3
DC – 6 GHz 18 W GaN RF Power Transistor
Specifications
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Drain Voltage,Vd
Gate Voltage,Vg
Drain to Gate Voltage, Vd – Vg
Drain Current, Id
Gate Current, Ig
Power Dissipation, Pdiss
RF Input Power, CW, T = 25ºC
Channel Temperature, Tch
Mounting Temperature (30
Seconds)
Storage Temperature
+40 V
-50 to 0 V
80 V
1.5 A
-25 to 25 mA
26 W
37 dBm
250 oC
260 oC
Vd
Idq
Id_drive (Under RF
Drive)
Vg
Channel
Temperature, Tch
-40 to 150 oC
Min
Typical
28
50
Max Units
30
V
mA
1400
mA
-3.7
V
200
o
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Absolute maximum ratings at 3 GHz.
Operation of this device outside the parameter ranges given
above may cause permanent damage. These are stress
ratings only, and functional operation of the device at these
conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 25 ºC, Vd = 28 V, Idq = 50 mA, Vg = -3.7 V Typical.
Symbol
RF Characteristics
Min
Load Pull Performance at 3 GHz (VDS=28V, IDQ= 50mA, CW)
Linear Gain
GLIN
Output Power at 3 dB Gain Compression
P3dB
Drain Efficiency at 3 dB Gain Compression
DE3dB
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
Gain at 3 dB Compression
G3dB
Load Pull Performance at 6 GHz (VDS=28V, IDQ= 50mA, CW)
Linear Gain
GLIN
Output Power at 3 dB Gain Compression
P3dB
Drain Efficiency at 3 dB Gain Compression
DE3dB
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
Gain at 3 dB Compression
G3dB
Performance at 5.4 GHz in the 5-6 GHz Fixture (VDS=28V, IDQ= 50mA, Pulse:100µs 20%)
Linear Gain
GLIN
9.0
Output Power at 3 dB Gain Compression
P3dB
17.8
Drain Efficiency at 3 dB Gain Compression
DE3dB
50
Power-Added Efficiency at 3 dB Gain Compression
PAE3dB
40
Gain at 3 dB Compression
G3dB
6.0
Narrowband Performance at 3.5 GHz (VDS=28V, IDQ= 50mA, CW at P1dB, applied for 3.5 secs)
Impedance Mismatch Ruggedness
VSWR
Typ
Max Units
15.0
20.0
60
56
12.5
dB
W
%
%
dB
11.5
19.0
60
52
8.5
dB
W
%
%
dB
9.5
21.0
58
45
6.5
dB
W
%
%
dB
10:1
Note: VSWR testing performed with increasing real impedance value only from reference Z to 10 times reference Z.
Preliminary Data Sheet: Rev - A 06/14/2011
© 2011 TriQuint Semiconductor, Inc.
- 2 of 15-
Disclaimer: Subject to change without notice
Connecting the Digital World to the Global Network®