T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • Wideband and narrowband defense and commercial communication systems –– General Purpose RF Power –– Jammers –– Radar –– Professional radio systems –– WiMAX –– Wideband amplifiers –– Test instrumentation –– Cellular infrastructure Available Package Product Features • Frequency: DC to 6 GHz • Linear Gain: >10 dB at 6 GHz • Operating Voltage: 28 V • Output Power (P3dB): >7 W at 6 GHz • Lead-free and RoHS compliant • Low thermal resistance package Package Information General Description The TriQuint T1G6000528-Q3 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 6 GHz and typically provides >10 dB gain at 6 GHz. The device is constructed with TriQuint’s proven 0.25 µm production process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs. Ordering Information Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. Package Type Q3 Material No. –1– Description 5.0mm x 4.0mm ceramic air cavity straight lead package Part No. Base CuMo Description ECCN 1075579 T1G6000528-Q3 Packaged part EAR99 1081733 T1G6000528-Q3EVB3 Narrowband 3.0 to 3.5 GHz evaluation board EAR99 Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Specifications Absolute Maximum Ratings1 Sym Parameter Value V+ Positive Supply Value2 V Negative Supply Voltage Range I Positive Supply Current2 - 28 - 10 V to 0 V 0.8 A |IG| Gate Supply Current PD Power Dissipation2 10 W TCH Operating Channel Temperature2 200°C 12.5 mA Notes: Absolute maximum ratings at 3 GHz Absolute maximum ratings are set based on industry recommended standard mean time to failure (MTTF) greater than 1M hours while operating at a maximum case temperature of 85C . Operating at lower maximum case temperatures allows maximum operating voltage to be increased up to a maximum of 40V. Application specific limits can be determined with engineering guidance from TriQuint. 1 2 Median Lifetime (Tm) ChannelTemperature Temperature(Tch) (Tch) Median Lifetime (Tm) vs.vs.Channel Mediian Lifetime, (Hours) Median Lifetime, TmTm (Hours) 1.E+15 1.E+14 1.E+13 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 FET7 1.E+04 25 50 75 100 125 150 175 200 225 250 275 Channel Temperature, Tch Channel Temperature, Tch(°C) (°C) Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. –2– Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Specifications Thermal Information Test Conditions TCH (°C) ѲJC (°C/W)1 DC at 85°C Case 199 11.2 Notes: 1 Thermal resistance (channel to backside of case) T1G6000528-Q3 Max Channel Temperture vs Pulse Width (Tbase = 85° C, Pdiss = 3 W/mm) T1G6000528-Q3 Max Channel Temperature vs Pulse Width (Tbase = 85° C, Pdiss = 3 W/mm) 180 Maximum Channel nel Temperature (degC) Maximum Channel Temperature (degC) 160 140 120 100 80 60 40 5% duty cycle 25% duty cycle 20 50% duty cycle 0 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 1.00E-01 1.00E+00 Pulse PulseWidth Width(sec) (sec) Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. –3– Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Electrical Specifications Recommended operating conditions apply unless otherwise specified: TA=25 °C DC Characteristics Characteristics Symbol Min Typ Max Unit Conditions Break-Down Voltage Drain Source BVDSX 85 120 V VGS= -8 V; ID=1 mA Gate Quiescent Voltage VGS (Q) -3.9 V VDS=28 V; IDQ=100 mA Gate Threshold Voltage VGS (th) -4.5 V VDS=10 V; ID=5 mA Saturated Drain Current IDSX 2 A VDS=5 V; VGS=0 V RF Characteristics Characteristics Symbol Min Typ Max Unit Load Pull Performance at 6.0 GHz (VDS = 28 V, IDQ = 50 mA, CW) Linear Gain GLIN 13.0 13.5 dB Output Power at 3 dB Gain Compression P3dB 8.0 10.0 W Drain Efficiency at 3 dB Gain Compression DE3dB 55 65 % Power-Added Efficiency at 3 dB Gain Compression PAE3dB 50 55 % G3dB 10.0 10.5 dB Gain at 3 dB Compression Performance at 3.3 GHz in the 3.0 to 3.5 GHz Fixture (VDS = 28 V, IDQ = 50 mA, 200msec pulse, 20% duty-cycle) Linear Gain GLIN 15.5 16.9 dB Output Power at 3 dB Gain Compression P3dB 8.9 11.0 W Drain Efficiency at 3 dB Gain Compression DE3dB 55 58 % Power-Added Efficiency at 3 dB Gain Compression PAE3dB 50 53 % G3dB 12.5 13.9 dB Gain at 3 dB Compression Narrowband Performance at 3.5 GHz (VDS = 28 V, IDQ = 50 mA, CW at P1dB, applied for 3.5 secs) Impedance Mismatch Ruggedness Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. VSWR –4– 10:1 Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Device Characterization Data S-Parameter Smith Chart T1G6000528-Q3 VDS=28V, IDQ=50 mA j10 j5 j20 j2 j50 6000MHz 2 0 5 10 20 6000MHz ∞ 50 100MHz S22 −j2 −j50 S11 −j5 −j20 −j10 Small-Signal Gain Maximum Stable Gain of T1G6000528-Q3 VDS=28V, IDQ=50 mA Gmax vs. Frequency 35 Max Stable Gain 30 Gain (dB) 25 20 15 10 5 0 0 1000 2000 3000 Frequency (MHz) 4000 5000 6000 The data was taken in a package fixture. The reference planes are at the package interface. Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. –5– Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor S-Parameter Data (VDS = 28 V, IDQ = 50 mA) Freq. [GHz] Real S11 Imag S11 Real S21 Imag S21 Real S12 Imag S12 Real S22 Imag S22 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5 4.6 4.7 4.8 4.9 5.0 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6.0 0.892 0.726 0.438 0.127 -0.058 -0.178 -0.276 -0.349 -0.444 -0.521 -0.589 -0.637 -0.681 -0.719 -0.747 -0.769 -0.786 -0.799 -0.810 -0.818 -0.826 -0.833 -0.839 -0.844 -0.849 -0.853 -0.856 -0.858 -0.859 -0.858 -0.857 -0.854 -0.850 -0.845 -0.839 -0.833 -0.825 -0.817 -0.809 -0.800 -0.790 -0.780 -0.770 -0.759 -0.746 -0.733 -0.720 -0.706 -0.693 -0.681 -0.671 -0.657 -0.638 -0.609 -0.566 -0.512 -0.464 -0.389 -0.295 -0.168 -0.182 -0.593 -0.840 -0.926 -0.910 -0.894 -0.856 -0.817 -0.777 -0.726 -0.669 -0.608 -0.558 -0.501 -0.452 -0.411 -0.375 -0.344 -0.315 -0.289 -0.263 -0.238 -0.214 -0.190 -0.166 -0.143 -0.119 -0.094 -0.067 -0.038 -0.006 0.028 0.063 0.098 0.132 0.165 0.196 0.226 0.253 0.278 0.300 0.321 0.341 0.360 0.379 0.400 0.421 0.443 0.464 0.486 0.507 0.528 0.551 0.576 0.605 0.634 0.657 0.687 0.709 0.688 -14.955 -12.756 -10.636 -8.639 -6.798 -5.134 -3.659 -2.377 -1.287 -0.381 0.353 0.929 1.365 1.677 1.886 2.009 2.066 2.074 2.049 2.006 1.958 1.915 1.886 1.878 1.895 1.940 2.012 2.110 2.231 2.370 2.522 2.678 2.832 2.974 3.097 3.193 3.252 3.268 3.234 3.145 2.998 2.798 2.800 2.798 2.789 2.759 2.652 2.054 -0.806 -2.262 -2.554 -2.647 -2.687 -2.703 -2.705 -2.692 -2.653 -2.562 -2.203 -1.649 4.241 7.176 9.084 10.186 10.673 10.700 10.398 9.874 9.214 8.485 7.737 7.010 6.329 5.712 5.168 4.701 4.309 3.986 3.724 3.515 3.348 3.213 3.099 2.997 2.899 2.798 2.689 2.568 2.432 2.282 2.118 1.941 1.755 1.564 1.371 1.182 1.002 0.835 0.685 0.555 0.449 0.370 0.349 0.363 0.430 0.590 0.962 1.934 2.704 1.685 1.198 0.975 0.860 0.805 0.798 0.842 0.957 1.184 1.485 1.944 0.005 0.008 0.012 0.016 0.020 0.024 0.028 0.031 0.034 0.036 0.037 0.038 0.038 0.037 0.037 0.035 0.034 0.033 0.031 0.030 0.028 0.027 0.026 0.026 0.025 0.025 0.025 0.025 0.026 0.026 0.027 0.028 0.029 0.030 0.030 0.031 0.031 0.031 0.030 0.029 0.028 0.026 0.023 0.020 0.016 0.012 0.008 0.003 -0.002 -0.007 -0.012 -0.018 -0.022 -0.027 -0.031 -0.033 -0.035 -0.036 -0.035 -0.032 0.005 0.011 0.015 0.017 0.018 0.017 0.015 0.013 0.011 0.008 0.006 0.004 0.002 0.000 -0.001 -0.002 -0.003 -0.004 -0.005 -0.005 -0.005 -0.006 -0.006 -0.006 -0.007 -0.007 -0.007 -0.007 -0.008 -0.008 -0.008 -0.009 -0.009 -0.009 -0.009 -0.009 -0.009 -0.008 -0.008 -0.007 -0.007 -0.006 -0.005 -0.004 -0.003 -0.002 -0.001 0.000 0.001 0.002 0.002 0.003 0.003 0.003 0.002 0.002 0.002 0.003 0.003 0.005 0.440 0.361 0.294 0.236 0.187 0.144 0.106 0.072 0.040 0.008 -0.025 -0.059 -0.091 -0.122 -0.149 -0.173 -0.194 -0.213 -0.231 -0.249 -0.268 -0.287 -0.306 -0.323 -0.339 -0.352 -0.363 -0.372 -0.380 -0.389 -0.397 -0.406 -0.414 -0.424 -0.433 -0.443 -0.453 -0.463 -0.472 -0.481 -0.490 -0.498 -0.506 -0.513 -0.520 -0.527 -0.534 -0.540 -0.547 -0.553 -0.559 -0.565 -0.571 -0.577 -0.582 -0.588 -0.593 -0.597 -0.601 -0.605 -0.285 -0.316 -0.342 -0.362 -0.379 -0.391 -0.401 -0.409 -0.415 -0.422 -0.428 -0.435 -0.441 -0.447 -0.451 -0.454 -0.455 -0.454 -0.451 -0.446 -0.439 -0.431 -0.422 -0.412 -0.402 -0.393 -0.384 -0.377 -0.370 -0.364 -0.359 -0.354 -0.349 -0.344 -0.339 -0.332 -0.324 -0.315 -0.303 -0.290 -0.273 -0.255 -0.237 -0.218 -0.201 -0.186 -0.172 -0.160 -0.150 -0.139 -0.130 -0.120 -0.111 -0.101 -0.092 -0.082 -0.072 -0.061 -0.049 -0.037 The data was taken in a package fixture. The reference planes are at the package interface. Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. –6– Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Device Characterization Data Load-Pull Data Test conditions: VDD= 28 V, IDQ = 50 mA, Test signal = CW j25 j12.5 j50 500 MHz j5 j125 ZLeff 0 5 ZLcmp 12.5 25 500 MHz 500 MHz50 500 MHz 125 ZLpwr 6000 MHz 6000 MHz 6000 MHz −j5 ZS −j12.5 6000 MHz ∞ −j125 −j50 −j25 Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. –7– Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Load-Pull Data RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency (ZLcmp). Test conditions: VDS=28V, IDQ= 50mA Freq. [MHz] Real(ZS) Imag(ZS) Real(ZL) Imag(ZL) G3dB [dB] P3dB [dBm] P3dB [W] PAE @3dB[%] 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3100 3200 3300 3400 3500 3600 3700 3800 3900 4000 4100 4200 4300 4400 4500 4600 4700 4800 4900 5000 5100 5200 5300 5400 5500 5600 5700 5800 5900 6000 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 5.00 86.68 80.16 72.72 65.74 59.41 53.61 48.21 43.15 38.42 34.02 29.98 26.32 23.05 20.16 17.62 15.40 13.46 11.77 10.29 8.97 7.78 6.66 5.60 4.56 3.55 2.54 1.55 0.59 -0.33 -1.20 -2.03 -2.80 -3.53 -4.23 -4.89 -5.52 -6.14 -6.74 -7.33 -7.93 -8.52 -9.11 -9.73 -10.36 -11.03 -11.75 -12.54 -13.41 -14.39 -15.52 -16.84 -18.43 -20.37 -22.78 -25.88 -29.97 26.11 25.94 25.77 25.62 25.46 25.31 25.16 25.01 24.86 24.71 24.55 24.40 24.23 24.06 23.89 23.71 23.52 23.32 23.11 22.90 22.67 22.43 22.18 21.93 21.66 21.38 21.09 20.79 20.48 20.16 19.84 19.52 19.20 18.89 18.60 18.32 18.06 17.82 17.60 17.40 17.23 17.07 16.93 16.82 16.71 16.63 16.57 16.52 16.49 16.48 16.50 16.53 16.59 16.68 16.80 16.95 1.23 1.34 1.47 1.59 1.73 1.87 2.01 2.15 2.29 2.43 2.57 2.71 2.84 2.97 3.09 3.20 3.31 3.40 3.49 3.56 3.62 3.68 3.73 3.77 3.81 3.85 3.88 3.92 3.97 4.01 4.04 4.06 4.05 4.00 3.93 3.80 3.63 3.40 3.11 2.77 2.38 1.95 1.48 0.97 0.43 -0.14 -0.73 -1.36 -2.00 -2.67 -3.36 -4.08 -4.82 -5.58 -6.37 -7.19 17.8 17.9 17.9 18.0 18.0 18.1 18.1 18.2 18.2 18.3 18.3 18.3 18.4 18.4 18.5 18.5 18.2 17.8 17.5 17.1 16.8 16.4 16.1 15.7 15.4 15.0 14.9 14.8 14.8 14.7 14.6 14.5 14.4 14.4 14.3 14.2 14.0 13.9 13.7 13.6 13.4 13.2 13.1 12.9 12.8 12.6 12.5 12.4 12.3 12.2 12.1 11.9 11.8 11.7 11.6 11.5 38.8 38.9 38.9 39.0 39.0 39.1 39.3 39.6 39.8 40.1 40.3 40.5 40.8 41.0 41.3 41.5 41.5 41.4 41.4 41.3 41.3 41.2 41.2 41.1 41.1 41.0 41.0 41.0 40.9 40.9 40.9 40.9 40.9 40.8 40.8 40.8 40.8 40.7 40.7 40.6 40.6 40.6 40.5 40.5 40.4 40.4 40.4 40.4 40.4 40.4 40.4 40.4 40.4 40.4 40.4 40.4 7.6 7.7 7.8 7.9 8.0 8.1 8.6 9.1 9.6 10.1 10.7 11.3 12.0 12.6 13.4 14.1 14.0 13.8 13.6 13.5 13.3 13.2 13.0 12.9 12.7 12.6 12.5 12.5 12.4 12.4 12.3 12.2 12.2 12.1 12.1 12.0 11.9 11.8 11.7 11.6 11.5 11.4 11.3 11.2 11.1 11.0 11.0 11.0 11.0 11.0 11.0 11.0 11.0 11.0 11.0 11.0 54.0 54.4 54.8 55.2 55.6 56.0 57.4 58.8 60.2 61.6 63.0 64.4 65.8 67.2 68.6 70.0 68.6 67.2 65.8 64.4 63.0 61.6 60.2 58.8 57.4 56.0 56.6 57.2 57.8 58.4 59.0 59.6 60.2 60.8 61.4 62.0 62.0 62.0 62.0 62.0 62.0 62.0 62.0 62.0 62.0 62.0 61.7 61.4 61.1 60.8 60.5 60.2 59.9 59.6 59.3 59.0 Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. –8– Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Typical Performance: Gain, Efficiency and Output Power Performance is measured at DUT reference plane Gain DEff., and PAE vs. Pout Gain, DEff., and PAE vs. Pout ZL = 23.14 + j0.58 Ω 80 20 70 19 60 17 50 16 40 15 30 Gain DEff. 14 12 26 28 30 32 34 Pout [dBm] 36 38 40 17 50 16 40 15 30 Gain DEff. 12 26 0 42 28 17 ZS = 2.77 − j11.01 Ω ZL = 13.85 + j1.40 Ω 80 16 70 15 60 14 50 14 40 13 30 Gain DEff. 12 11 10 26 20 PAE 28 30 32 34 Pout [dBm] 36 Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. 38 34 Pout [dBm] 36 38 40 13 Freq. Freq = 6GHz; VVds = 28V, I = 50mA; = 50 CW mA; CW = 6GHz; DS = 28V, IdqDQ 0 42 60 ZS = 12.99 − j30.90 Ω ZL = 18.88 − j8.87 Ω 50 12 40 11 30 Gain DEff. 8 26 –9– 20 PAE 9 0 42 80 70 10 10 40 32 28 30 32 34 Pout [dBm] 36 38 DEff. & PAE [%] 15 DEff. & PAE [%] Gain [dB] 16 30 10 Gain DEff., and PAE vs. Pout Gain, DEff., and PAE vs. Pout Gain [dB] 18 20 PAE Gain DEff., and PAE vs. Pout Gain, DEff., and PAE vs. Pout Freq. =Freq 5GHz; VDS ==28V, IDQ= =50mA; 50 mA; = 5GHz; Vds 28V, Idq CW CW 60 13 10 80 70 ZS = 2.16 − j6.47 Ω ZL = 18.02 + j6.49 Ω 14 20 PAE 13 18 Freq. Freq = 4GHz; VVds = 28V, I = 50mA; = 50 CW mA; CW = 4GHz; DS = 28V, IdqDQ DEff. & PAE [%] 18 DEff. & PAE [%] Gain [dB] 19 ZS = 2.72 + j0.10 Ω Gain DEff., and PAE vs. Pout Gain, DEff., and PAE vs. Pout Gain [dB] 20 Freq. =Freq 3GHz; VDS ==28V, IDQ= =50mA; 50 mA; = 3GHz; Vds 28V, Idq CW CW 10 40 0 42 Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Performance Over Temperature: Gain, Efficiency and Output Power Gain vs. Temperature Drain Efficiency vs. Temperature 3300 MHz, 28V, 503300 mA; Gain vs. Temperature, MHz,CW 28 V, P 503dB mA,Compression CW P3dB Compression 3300 MHz, 28V, 50 mA; CW P Compression Drain Efficiency vs. Temperature, 3300 MHz, 28 V, 50 mA, CW P3dB Compression 3dB 16 70 69 15.5 68 67 15 DrainEff. (%) Gain (dB) 66 14.5 65 64 14 63 62 13.5 61 13 −40 −20 0 20 Temperature (C) 40 60 60 80 −40 −20 0 20 Temperature (C) 40 60 80 Power vs. Temperature 3300vs.MHz, 28V, 50 Compression Power Temperature, 3300mA; MHz, CW 28 V, P 503dB mA, CW P3dB Compression 14 13.8 13.6 13.4 Power (W) 13.2 13 12.8 12.6 12.4 12.2 12 −40 Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. −20 0 20 Temperature (C) – 10 – 40 60 80 Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Evaluation Board Performance: 3.0 to 3.5 GHz T1G6000528-Q3 P3dB Compression in Narrowband Fixture T1G6000528−Q3 P3dB Compression in Narrow−Band Fixture 28V, 28V, 50mA; 200μsec duty-cycle pulse 50mA, 200µsec–− 20% 20% duty−cycle pulse 70 Drain Eff. (%) PAE (%) 68 66 64 62 60 58 56 54 52 50 3000 3050 3100 3150 3200 3250 3300 Frequency (MHz) 3350 3400 3450 3500 T1G6000528-Q3 P3dB Compression Narrowband T1G6000528−Q3 P3dB Compression in in Narrow−Band Fixture Fixture 28V, 28V, 50mA; 200μsec duty-cycle pulse 50mA, 200µsec–−20% 20% duty−cycle pulse 15 Power (W) Gain (dB) 14.5 14 13.5 13 12.5 12 11.5 11 10.5 10 3000 3050 3100 Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. 3150 3200 3250 3300 Frequency (MHz) – 11 – 3350 3400 3450 3500 Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Evaluation Board Information PC Board Layout: T1G6000528-Q3-EVB3, 3.0 to 3.5 GHz Bill of Materials Reference Desg. Value Manufacturer Reference Desg. Value Manufacturer C1 22 uF Sprague T491D C9 0.1 uF Kemet C1206C104KRAC7800 C2 1 uF Kemet 1812C105KAT2A C10 .01 uF Kemet C1206C103KRAC7800 C3 0.1 uG Kemet C1206C104KRAC7800 C11 100 pF ATC 100B101 C4 .01 uF Kemet C1206C103KRAC7800 C12 2400 pF DLI C08BL242X5UNX0B C5 100 pF ATC 100B101 L2 9.85 nH Coilcraft C6 2400 pF DLI C08BL242X5UNX0B C13 27 pF ATC 600L270JT200 R1 1000 ohm Vishay Dale CRCW08051001F100 C14 27 pF ATC 600L270JT200 R2 12 ohm Vishay Dale RM73B2B120J PCB RO3210 Rogers L1 9.85 nH Coilcraft 16069JLB IMN C7 22 uF Sprague T491D distributed transmission line input network C8 1 uF Kemet OMN distributed transmission line output network Part Number 1812C105KAT2A Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. – 12 – Part Number 16069JLB εr=10.2 h=25 mil Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Evaluation Board Information (Continued) PC Board Schematic: T1G6000528-Q3-EVB3, 3.0 to 3.5 GHz GATE DRAIN C1 C2 C3 C9 C4 C10 C5 C11 C6 C12 C8 C7 R1 R2 L1 50 Ohm FET1 "T1G6000528_Q3" D 3 1 SMA_1 C13 L2 2 "IMN" 1 G G D 2 S3 S 50 Ohm 3 1 2 "OMN" C14 SMA_2 Bias-up Procedure Bias-down Procedure Set gate voltage (Vg) to -5.0 V Turn off RF signal Set drain voltage (Vd) to 28 V Turn off Vd and wait 1 second to allow drain capacitor(s) to dissipate Slowly increase Vg until quiescent Id is 50 mA. Typical Vg is -3.9 V Turn off Vg Apply RF signal Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. – 13 – Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Mechanical Information Package Information and Dimensions This package is lead-free/ROHS-compliant. Drain Source (flange) Gate Note: Unless specified otherwise, dimensions are in millimeters Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. – 14 – Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Product Compliance Information ESD Information Caution! ESD-Sensitive Device ESD Rating: 1A Value: Passes ≥ 250 V min. Test: Human Body Model (HBM) Standard: JEDEC Standard JESD22-A114 MSL Rating Level 3 at +260 °C convection reflow. The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. ECCN U.S. Department of Commerce EAR99 Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. – 15 – Disclaimer: Subject to change without notice Connecting the digital World to the Global Network® T1G6000528-Q3 7W, 28V, DC – 6 GHz, GaN RF Power Transistor Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Released Datasheet: Rev. K 8/11/2011 Copyright © 2011 TriQuint Semiconductor, Inc. – 16 – Disclaimer: Subject to change without notice Connecting the digital World to the Global Network®