TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Applications • • • • Distribution Amplifiers Multi Dwelling Units Drop Amplifiers Single Ended Gain Blocks SOT-89 Package Product Features • • • • • • • • Functional Block Diagram 50-1200 MHz Bandwidth High Gain : 18.5 dB +38 dBm typical OIP3 2.5 dB typical NF Low Distortion : CSO -70dBc, CTB -88dBc tested at 10dBmV/ch at input, 80 ch NTSC pHEMT Device Technology SOT-89 Package Single +8V Supply General Description Pin Configuration The TAT7427B is a high gain 75 Ω RF Amplifier designed for CATV applications from 50 to 1000 MHz (with operation up to 1.25GHz). The balance of low noise and distortion provides an ideal solution for drop and distribution amplifiers. It is particularly well suited for new home networks requiring higher gain for a large number of splits. Pin # Symbol 1 2, 4 3 RF_ Input Ground RF_Output / Vdd The TAT7427B is fabricated using 6-inch GaAs pHEMT technology to optimize performance and cost. It provides excellent gain and return loss consistency inherent to the pHEMT process. Ordering Information Part No. Description TAT7427B-T1 High Gain 75 Ω RF Amplifier TAT7427B-T1-EB Drop Amplifier Evaluation Board (Lead free / RoHS compliant SOT-89 Pkg) Standard T/R size = 1000 pieces on a 7” reel. Data Sheet: Rev A 05-15-11 © 2011 TriQuint Semiconductor, Inc. - 1 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Specifications Absolute Maximum Ratings Recommended Operating Conditions Parameter Rating Parameter Min Typ Max Units Storage Temperature -55 to 150 oC Vdd Operating Case Temperature Tj (For >106 MTTF) -20 Operation of this device outside the parameter ranges given above may cause permanent damage. 8 85 150 V C o C o Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions: Case Temperature 25ºC Parameter Operational Frequency Range Gain Gain Flatness Noise Figure Input Return Loss Output Return Loss CSO CTB Output IP2 Output IP3 Supply Voltage, Vcc Device Voltage Supply Current, Idd Thermal Resistance (θjc) Conditions Min Typical 50 10 dBmV/ch at input, 80 ch NTSC flat 10 dBmV/ch at input, 80 ch NTSC flat See Note 1. See Note 1. See Note 2. 18.5 ±0.3 2.5 23 20 -70 -88 61 38 +8 +6 145 36 Max Units 1002 MHz dB dB dB dB dB dBc dBc dBm dBm V V mA o C/W 175 Notes: 1. OIP3 and OIP2 tested with two tones at 225 MHz and 325 MHz. Measured at 10 dBm/tone output power. 2. Voltage at the device is 6V. Data Sheet: Rev A 05-15-11 © 2011 TriQuint Semiconductor, Inc. - 2 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Typical Performance Data Note: Temperature indicated in plots below is Case Temperature. Gain vs. Frequency Input Return Loss vs. Frequency 20 0 Input Return Loss (dB) 5 Gain (dB) 19 18 -40C 25C 17 85C 16 10 -40C 15 20 25C 25 85C 30 35 40 15 45 50 250 450 850 650 Frequency (MHz) 1050 1250 50 250 Output Return Loss vs. Frequency 1050 1250 500 600 CSO vs. Frequency 0 10 dBmV/ch at input, 80 ch NTSC flat -50 5 25C 10 -55 -40C 15 25C 20 85C CSO (dBc) Output Return Loss (dB) 450 650 850 Frequency (MHz) 25 -40C -60 85C -65 -70 30 -75 35 40 -80 50 250 450 650 850 Frequency (MHz) 1050 1250 0 100 200 300 400 Frequency (MHz) CTB vs. Frequency 10 dBmV/ch at input, 80 ch NTSC flat -60 CTB (dBc) -65 -40C -70 25C -75 85C -80 -85 -90 0 Data Sheet: Rev A 05-15-11 © 2011 TriQuint Semiconductor, Inc. 100 200 300 400 Frequency (MHz) - 3 of 7 - 500 600 Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Pin Description Pin Symbol Description 1 2 3 Backside Paddle RF_IN GND RF_OUT GND RF Input , DC voltage present, blocking capacitor required Ground RF Output , DC voltage present, blocking capacitor required Multiple vias should be employed to minimize inductance and thermal resistance Applications Information PC Board Layout Core is 0.062”, FR4, єr = 4.7. Metal layers are 1-oz copper. The pad pattern shown has been developed and tested for optimized assembly at TriQuint Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances. Since surface mount processes vary from company to company, careful process development is recommended. . Data Sheet: Rev A 05-15-11 © 2011 TriQuint Semiconductor, Inc. - 4 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Applications Information PC Board Schematic Bill of Material Reference Desg. Value Description Manufacturer Part Number U1 C1, C4, C5 C2 C3 L1 L2 L3 L4 R1, R2 0.01 uF 680 pF 120 pF 880 nH 3.9 nH 5.6 nH 500 nH 16 Ω RF Amplifier, 75 ohm , 50-1000MHz Cap, Chip, 0603, 10%, 50V, X7R Cap, Chip, 0402, 50V, 5%, COG Cap, Chip, 0402, 50V, 5%, COG Coil, Wire Wound, 1206, ±10% Inductor, Chip, 0603, 5% Inductor, Chip, 0603, 5% Coil, Wire Wound, 1206, ±10% Resistor, Chip, 1206, ±5%, 1/4W TriQuint various various various various various various various various Data Sheet: Rev A 05-15-11 © 2011 TriQuint Semiconductor, Inc. - 5 of 7 - TAT7427B Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Mechanical Information Package Information and Dimensions This package is lead-free, RoHS-compliant, and green. The plating material on the pins is 100% matte tin. It is compatible with both lead-free (maximum 260 °C reflow temperature) and leaded (maximum 245 °C reflow temperature) soldering processes. The TAT7427B will be marked with a “TAT7427B” designator and an 8 digit alphanumeric lot code (XXXXYYWW). The first 4 digits (XXXX) are the lot code. The last 4 digits (YYWW) are the date code consisting of the year and work week of assembly. Mounting Configuration All dimensions are in millimeters (inches). Angles are in degrees. Notes: 1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Data Sheet: Rev A 05-15-11 © 2011 TriQuint Semiconductor, Inc. - 6 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network® TAT7427B High Gain RF Amplifier, 75 Ω, 50-1200 MHz Product Compliance Information ESD Information Solderability Compatible with the latest version of J-STD-020, Lead free solder, 260° ESD Rating: Value: Test: Standard: Class 1B Passes ≥ 500V min. Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes ≥ 2000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). This product also has the following attributes: • Lead Free • Halogen Free (Chlorine, Bromine) • Antimony Free • TBBP-A (C15H12Br402) Free • PFOS Free • SVHC Free MSL Rating MSL 3 at +260 °C convection reflow The part is rated Moisture Sensitivity Level 3 at 260°C per JEDEC standard IPC/JEDEC J-STD-020. Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: +1.707.526.4498 +1.707.526.1485 For technical questions and application information: Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Data Sheet: Rev A 05-15-11 © 2011 TriQuint Semiconductor, Inc. - 7 of 7 - Disclaimer: Subject to change without notice Connecting the Digital World to the Global Network®