TRIQUINT TQP3M9019

TQP3M9019
High Linearity LNA Gain Block
Applications
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Repeaters
Mobile Infrastructure
LTE / WCDMA / CDMA / EDGE
General purpose Wireless
Product Features
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16-pin 3x3 QFN package
Functional Block Diagram
20-4000 MHz
22 dB Gain @ 1900 MHz
1.3 dB Noise Figure @ 1900 MHz
+39.5 dBm Output IP3
50 Ohm Cascadable Gain Block
Unconditionally Stable
High Input Power Capability
+5V Single Supply, 125mA Current
3x3 mm QFN Package
General Description
The TQP3M9019 is a cascadable, high linearity gain
block amplifier in a low-cost surface-mount package. At
1.9 GHz, the amplifier typically provides 22 dB gain,
+39.5 dBm OIP3, and 1.3 dB Noise Figure while only
drawing 115 mA current. The device is housed in a
leadfree/green/RoHS-compliant industry-standard 16-pin
3x3mm QFN package.
Pin Configuration
Pin #
Symbol
2
11
All Other Pins
Backside Paddle
RF Input
RF Output / Vdd
N/C or GND
GND
The TQP3M9019 has the benefit of having high gain
across a broad range of frequencies while also providing
very low noise. This allows the device to be used in both
receiver and transmitter chains for high performance
systems. The amplifier is internally matched using a high
performance E-pHEMT process and only requires an
external RF choke and blocking/bypass capacitors for
operation from a single +5V supply. The internal active
bias circuit also enables stable operation over bias and
temperature variations.
The TQP3M9019 covers the 0.02 – 4 GHz frequency band
and is targeted for wireless infrastructure or other
applications requiring high linearity and/or low noise
figure.
Ordering Information
Part No.
Description
TQP3M9019
TQP3M9019-PCB_IF
TQP3M9019-PCB_RF
High Linearity LNA Gain Block
50-500 MHz Evaluation Board
0.5-4 GHz Evaluation Board
Standard T/R size = 2500 pieces on a 7” reel.
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
- 1 of 10 -
Disclaimer: Subject to change without notice
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TQP3M9019
High Linearity LNA Gain Block
Specifications
Recommended Operating Conditions
Absolute Maximum Ratings
Parameter
Storage Temperature
RF Input Power,CW,50 Ω, T=25ºC
Device Voltage,Vdd
Reverse Device Voltage
Rating
-65 to 150 oC
+23 dBm
+7 V
-0.3 V
Parameter
Min
Typ
Vdd
Tcase
4.75
-40
5
Max Units
5.25
+85
Tch (for>106 hours MTTF)
190
V
o
C
o
C
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended operating
conditions.
Operation of this device outside the parameter ranges given
above may cause permanent damage.
Electrical Specifications
Test conditions unless otherwise noted: +25ºC, +5V Vsupply, 50 Ω system.
Parameter
Operational Frequency Range
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
Conditions
Min
Typical
20
20
See Note 1.
+36
Noise Figure
Vdd
Current, Idd
Thermal Resistance (channel to case) jc
1900
22
10
13
+22
+39.5
1.3
+5
125
Max
Units
4000
MHz
MHz
dB
dB
dB
dBm
dBm
dB
V
mA
o
C/W
23
150
34
Notes:
1. OIP3 is measured with two tones at an output power of 3 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule. 2:1 rule gives relative value w.r.t. fundamental tone.
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
- 2 of 10 -
Disclaimer: Subject to change without notice
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TQP3M9019
High Linearity LNA Gain Block
Application Circuit Configuration
Notes:
1. See PC Board Layout, page 8 for more information.
2. Components shown on the silkscreen but not on the schematic are not used.
3. B1 (0 Ω jumper) may be replaced with copper trace in the target application layout.
4. The recommended component values are dependent upon the frequency of operation.
5. All components are of 0603 size unless stated on the schematic.
Bill of Material
Reference Designation
TQP3M9019-PCB_RF
500 MHz - 4000 MHz
TQP3M9019-PCB_IF
50 MHz - 500 MHz
TQP3M9019
100 pF
0.01 uF
68 nH
Do Not Place
0Ω
TQP3M9019
1000 pF
0.01 uF
330 nH
Do Not Place
0Ω
Q1
C2, C6
C1
L2
L1, D1, C3, C4
B1
Notes:
1. Performances can be optimized at frequency of interest by using recommended component values shown in the table below.
Reference
Designation
C2, C6
L2
50
200
0.01 uF
470 nH
1000 pF
220 nH
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
Frequency (MHz)
500
2000
2500
3500
100 pF
82 nH
22 pF
18 nH
22 pF
15 nH
- 3 of 10 -
22 pF
22 nH
Disclaimer: Subject to change without notice
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TQP3M9019
High Linearity LNA Gain Block
Typical Performance (TQP3M9019-PCB_RF)
Test conditions unless otherwise noted: +25ºC, +5V, 125 mA, 50 Ω system on TriQuint’s TQP3M9019-PCB_RF evaluation board.
Frequency
MHz
500
900
1900
2700
3500
4000
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3 [1]
Noise Figure [2]
dB
dB
dB
dBm
dBm
dB
25.6
11
10.5
+22.4
+41.8
0.9
24.6
10.5
12
+22.3
+40.6
0.9
22
10
13
+22
+40.6
1.3
20.5
11.5
9
+21.7
+38.5
1.7
19
8
10
+21.4
+38.8
2.1
18.3
6
11
+20.8
+37.9
2.4
Notes:
1. OIP3 measured with two tones at an output power of +4 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
2. Noise figure data shown in the table above is measured on evaluation board which includes board losses of around 0.1dB @ 2 GHz.
RF Performance Plots (TQP3M9019-PCB_RF)
Gain vs. Frequency over Temp
S11 vs. Frequency over Temp
0
28
C
C
C
C
-5
24
S11 (dB)
Gain (dB)
-40
-20
+25
+85
-10
20
+85
+25
-20
-40
-15
16
C
C
C
C
-20
0.5
1
1.5
2
2.5
3
3.5
4
0.5
1
1.5
2
2.5
3
3.5
4
Frequency (GHz)
Frequency (GHz)
Noise Figure vs. Frequency over Temp
S22 vs. Frequency over Temp
0
4
-5
3
NF (dB)
S22 (dB)
+85 C
-10
-40
-20
+25
+85
-15
C
C
C
C
+25 C
-40 C
2
1
0
-20
0.5
1
1.5
2
2.5
Frequency (GHz)
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
3
3.5
500
4
1000
1500
2000
2500
3000
3500
4000
Frequency (MHz)
- 4 of 10 -
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TQP3M9019
High Linearity LNA Gain Block
RF Performance Plots (TQP3M9019-PCB_RF)
OIP3 vs. Pout/tone over Temp
OIP3 vs. Frequency over Temp
F=1900 MHz, 1 MHz tone spacing
45
1 MHz tone spacing, 4 dBm/tone
45
40
OIP3 (dBm)
OIP3 (dBm)
40
+25
+85
-20
-40
35
30
+25
+85
-20
-40
C
C
C
C
35
30
25
25
0
2
4
Pout/tone (dBm)
6
0.5
8
1
OIP3 vs. Pout/tone over Freq
2
2.5
Frequency (GHz)
3
3.5
4
24
22
P1dB (dBm)
40
OIP3 (dBm)
1.5
P1dB vs. Frequency over Temp
+25°C, 1 MHz tone spacing
45
35
1.9 GHz
0.9 GHz
3.5 GHz
2.7 GHz
30
20
-40
-20
+25
+85
18
C
C
C
C
16
25
0
2
4
Pout/tone (dBm)
6
0.5
8
1
1.5
3
3.5
4
CW Signal
130
125
Idd (mA)
125
120
115
110
105
3.25
2.5
Idd vs. Temperature
T=25⁰C, CW Signal
130
2
Frequency (GHz)
Idd vs. Vdd
Idd (mA)
C
C
C
C
120
115
110
105
3.5
3.75
4
4.25
Vdd (V)
4.5
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
4.75
5
5.25
- 5 of 10 -
-40
-15
10
35
Temperature (⁰C)
60
85
Disclaimer: Subject to change without notice
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TQP3M9019
High Linearity LNA Gain Block
Typical Performance 50-500 MHz (TQP3M9019-PCB_IF)
Test conditions unless otherwise noted: +25ºC, +5V, 125 mA, 50 Ω system on TriQuint’s TQP3M9019-PCB_IF evaluation board.
Frequency
MHz
70
100
200
500
Gain
Input Return Loss
Output Return Loss
Output P1dB
OIP3 [1]
Noise Figure [2]
dB
dB
dB
dBm
dBm
dB
27
12
11
+21.6
+37.6
1.4
26.8
13
11
+21.9
+38.8
1.3
26.4
13
12
+21.9
+39
0.9
25.8
13
13
+22.2
+41.4
0.9
Notes:
1. OIP3 measured with two tones at an output power of +3 dBm / tone separated by 1 MHz. The suppression on the largest IM3 product is
used to calculate the OIP3 using 2:1 rule.
IF Performance Plots (TQP3M9019-PCB_IF)
Gain vs. Frequency over Temp
S11 vs. Frequency over Temp
0
28
-40 C
-20 ⁰C
+25 C
+85 C
-5
S11 (dB)
Gain (dB)
24
-40 C
-20 ⁰C
+25 C
+85 C
20
-10
-15
16
-20
0
100
200
300
400
500
0
100
Frequency (MHz)
300
400
500
Frequency (MHz)
S22 vs. Frequency over Temp
Noise Figure vs. Frequency over Temp
0
4
-40 C
+20 C
+25 C
+85 ⁰C
3
+85 C
NF (dB)
-5
S22 (dB)
200
-10
-15
+25 C
2
-40 C
1
-20
0
0
100
200
300
400
500
Frequency (MHz)
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
0
100
200
300
400
500
Frequency (MHz)
- 6 of 10 -
Disclaimer: Subject to change without notice
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TQP3M9019
High Linearity LNA Gain Block
IF Performance Plots (TQP3M9019-PCB_IF)
OIP3 vs. Frequency over Temp
P1dB vs. Frequency over Temp
1 MHz Spacing, 3 dBm/tone
24
45
22
35
P1dB (dB)
OIP3 (dBm)
40
-40 C
+25 C
+85 C
30
20
-40 C
+25 C
+85 C
18
16
14
25
0
100
200
300
Pout / tone (dBm)
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
400
500
0
100
200
300
400
500
Frequency (MHz)
- 7 of 10 -
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TQP3M9019
High Linearity LNA Gain Block
Pin Description
Pin
Symbol
Description
2
RF Input
Input, matched to 50 ohms. External DC Block is required.
11
Vdd / RFout
All other pins
GND
Output, matched to 50 ohms, External DC Block is required and supply voltage
These pins are not connected internally but are recommended to be grounded on the PCB
for optimal isolation.
Backside Paddle. Multiple vias should be employed to minimize inductance and thermal
resistance; see page 7 for suggested footprint.
GND Paddle
Applications Information
PC Board Layout
Top RF layer is .014” NELCO N4000-13, єr = 3.9, 4 total layers (0.062”
thick) for mechanical rigidity. Metal layers are 1-oz copper. 50 ohm
Microstrip line details: width = .029”, spacing = .035”.
The pad pattern shown has been developed and tested for optimized
assembly at TriQuint Semiconductor. The PCB land pattern has been
developed to accommodate lead and package tolerances. Since surface
mount processes vary from company to company, careful process
development is recommended.
For further technical information, Refer to www.TriQuint.com
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
- 8 of 10 -
Disclaimer: Subject to change without notice
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TQP3M9019
High Linearity LNA Gain Block
Mechanical Information
Package Information and Dimensions
This package is lead-free/RoHS-compliant.
The plating material on the leads is annealed
matte tin. It is compatible with both leadfree (maximum 260 °C reflow temperature)
and lead (maximum 245 °C reflow
temperature) soldering processes.
The component will be marked with an
“9019” designator with an alphanumeric lot
code on the top surface of package.
TriQuint
9019
YYWW
aXXXX
Mounting Configuration
All dimensions are in millimeters (inches). Angles are in degrees.
Notes:
1. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and
have a final plated thru diameter of .25 mm (.010”).
2. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance.
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
- 9 of 10 -
Disclaimer: Subject to change without notice
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TQP3M9019
High Linearity LNA Gain Block
Product Compliance Information
ESD Information
Solderability
Compatible with the latest version of J-STD-020, Lead
free solder, 260°
ESD Rating:
Value:
Test:
Standard:
Class 1A
Passes  250V to < 500 V
Human Body Model (HBM)
JEDEC Standard JESD22-A114
ESD Rating:
Value:
Test:
Standard:
Class IV
Passes  1000 V
Charged Device Model (CDM)
JEDEC Standard JESD22-C101
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
This product also has the following attributes:
 Lead Free
 Halogen Free (Chlorine, Bromine)
 Antimony Free
 TBBP-A (C15H12Br402) Free
 PFOS Free
 SVHC Free
MSL Rating
Level 1 at +260 °C convection reflow
The part is rated Moisture Sensitivity Level 1 at 260°C per JEDEC
standard IPC/JEDEC J-STD-020.
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
TriQuint:
Web: www.triquint.com
Email: [email protected]
Tel:
Fax:
+1.503.615.9000
+1.503.615.8902
For technical questions and application information:
Email: [email protected]
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint
assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained
herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with
the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest
relevant information before placing orders for TriQuint products. The information contained herein or any use of such
information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property
rights, whether with regard to such information itself or anything described by such information. TriQuint products are not
warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other
applications where a failure would reasonably be expected to cause severe personal injury or death.
Data Sheet: Rev J 11/01/11
© 2010 TriQuint Semiconductor, Inc.
- 10 of 10
Disclaimer: Subject to change without notice
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