TGA4906-SM 4 Watt Ka-Band Packaged HPA Key Features • • • • • • Measured Performance Frequency Range: 28 - 31 GHz Psat: 36 dBm Gain: 23 dB Return Loss: -12 dB Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Package Dimensions: 5 x 5 x 1.19 mm Primary Applications • Ka-Band VSAT Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical Psat & P1dB (dBm) 38 37 36 Product Description 35 The TriQuint TGA4906-SM is a compact 4 Watt High Power Amplifier for Ka-band applications. The part is designed using TriQuint’s proven standard 0.15 um gate Power pHEMT production process. The TGA4906-SM provides a nominal 36 dBm of output power at an input power level of 14 dBm with a small signal gain of 23 dB. 34 33 32 Psat 31 P1dB 30 24 22 20 18 16 14 12 10 8 6 4 28.5 29 29.5 30 Frequency (GHz) 30.5 31 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 Gain IRL ORL 28 28.5 29 29.5 30 30.5 Return Loss (dB) Gain (dB) 28 The TGA4906-SM is a QFN 5x5 mm surface mount packaged. It is ideally suited for low cost emerging markets such as base station transmitters for satellite ground terminals and point to point radio. Lead-Free & RoHS compliant. Evaluation boards are available upon request. 31 Frequency (GHz) Datasheet subject to change without notice. TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - 1 TGA4906-SM Table I Absolute Maximum Ratings 1/ Symbol Vd-Vg Parameter Value Drain to Gate Voltage 11 V Vd Drain Voltage 6V Vg Gate Voltage Range Id Drain Current Ig Gate Current Range Pin Notes 2/ -5 to 0 V 3.7 A 2/ -15 to 202 mA Input Continuous Wave Power 26 dBm 2/ 1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect device lifetime. These are stress ratings only, and functional operation of the device at these conditions is not implied. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed Pd (as listed in “Thermal Information”). Table II Recommended Operating Conditions Symbol Value Vd Drain Voltage 6V Idq Drain Current 1.6 A Drain Current under RF Drive 3.0 A Id_Drive Vg 1/ Parameter 1/ Gate Voltage -0.75 V See assembly diagram for bias instructions. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Table III RF Characterization Table Bias: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical SYMBOL PARAMETER TEST CONDITIONS NOMINAL UNITS Gain Small Signal Gain f = 28 - 31 GHz 23 dB IRL Input Return Loss f = 28 - 31 GHz -12 dB ORL Output Return Loss f = 28 - 31 GHz -12 dB Psat Saturated Output Power f = 28 - 31 GHz 36 dBm Gain Temp Coefficient f = 28 - 31 GHz -0.04 dB/0C 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Table IV Power Dissipation and Thermal Properties Parameter Test Conditions Value Notes 1/ 2/ Maximum Power Dissipation Tbaseplate = 85 ºC Pd = 18.5 W Tchannel = 150 ºC Tm = 1.0E+6 Hrs Thermal Resistance, θjc Vd = 6 V Id = 1600 mA Pd = 9.6 W Tbaseplate = 85 ºC θjc = 3.5 (ºC/W) Tchannel = 119 ºC Tm = 4.1E+7 Hrs Thermal Resistance, θjc Under RF Drive Vd = 6 V Id = 3 A Pout = 4 W (36 dBm) Pd = 14 W Tbaseplate = 85 ºC θjc = 3.5 (ºC/W) Tchannel = 134 ºC Tm = 6.4E+6 Hrs Mounting Temperature 30 Seconds 260 ºC Storage Temperature 1/ -65 to 150 ºC For a median life of 1E+6 hours, Power Dissipation is limited to Pd(max) = (150 ºC – Tbase ºC)/θjc. 2/ Channel operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that channel temperatures be maintained at the lowest possible levels. 3/ Tbase is defined @ package pin # 33 (ground) Power Dissipated (W) Power De-rating Curve 20 18 16 14 12 10 8 6 4 2 0 Tm= 1.0E+6 Hrs -50 -25 0 25 50 75 100 125 150 175 200 Baseplate Temp (C) 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Measured Data Gain (dB) Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical 30 27 24 21 18 15 12 9 6 3 0 20 22 24 26 28 30 32 34 36 Return Loss (dB) Frequency (GHz) 0 -3 -6 -9 -12 -15 -18 -21 IRL -24 -27 -30 ORL 20 22 24 26 28 30 32 34 36 Frequency (GHz) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Measured Data Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical 38 Psat & P1dB (dBm) 37 36 35 34 33 32 Psat 31 P1dB 30 25 26 27 28 29 30 31 32 33 Frequency (GHz) 4.0 Pout @ 30GHz 35 3.5 Gain @ 30GHz 30 PAE @ 30GHz 3.0 25 Id @ 30GHz 2.5 20 2.0 15 1.5 10 1.0 5 0.5 0 0.0 -20 -15 -10 -5 0 5 10 15 Id (A) Pout (dBm), Gain (dB), PAE (%) 40 20 Input Power (dBm) 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Measured Data Gain (dB) Bias conditions: Vd = 6 V, Idq = 1.6 A, Vg = -0.75 V Typical 30 28 26 24 22 20 18 16 14 12 10 8 6 - 40 C +25 C +75 C 20 22 24 26 28 30 32 34 36 Frequency (GHz) Psat (dBm) 38 - 40C 37 + 25C 36 + 75C 35 34 33 32 31 30 25 26 27 28 29 30 31 32 Frequency (GHz) 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Electrical Schematic Vd_3 top Vd_2 top Vd_3 bottom Vd_2 bottom Vd_1 top 30 27 14 26 15 TGA4906-SM RF Input 21 4 RF Output 11 Vg_1,2,3 Bias Procedures Bias-up Procedure Bias-down Procedure Vg set to -1.5 V Turn off RF supply Vd_set to +6 V Reduce Vg to -1.5V. Ensure Idq ~ 0 mA Adjust Vg more positive until Idq is 1.6 A. This will be ~ Vg = -0.75 V Turn Vd to 0 V Apply RF signal to input Turn Vg to 0 V 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Package Pinout Pin #1 DOT Pin Description 4 RF Input 21 RF Output 14, 15, 26, 27, 30 Vd 11 Vg 1, 8, 9, 16, 17, 24, 25, 32, 33 Ground 2, 3, 5, 6, 7, 10, 12, 13, 18, 19, 20, 22, 23, 28, 29, 31 N/C 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Mechanical Drawing Units: millimeters Pkg x, y, z size tolerance: +/- 0.050 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Recommended Assembly Board C1 See detail tuning on page 12 8mils diameter Copper filled vias Board is 8mil thick RO4003 with 0.5oz copper cladding. Board is soldered on metal block and adequate heatsinking is required for 14 W power dissipation. C2 C3 R1 C4 R2 R3 C5C6 C7 C8 C9 R7 R4 R5 R6 C12 C10 C11 Part Description C1, C2, C3, C10, C11, C12 1 uF Capacitor (0603) C4, C5, C6, C7, C8, C9 0.01 uF Capacitor (0402) R1, R2, R3, R4, R5, R6 10 ohm Resistor (0402) R7 22 ohm Resistor (0402) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Recommended Assembly Board (Con’t) Detail of PCB Tuning 147.2 54.6 38.5 10.8 6.6 50 x 57.5 17.5 29 x 23.5 43 x 5 8 x 35 20 x 57.5 5 x 18 All units are in mils 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev - TGA4906-SM Assembly Notes Recommended Surface Mount Package Assembly • Proper ESD precautions must be followed while handling packages. • Clean the board with acetone. Rinse with alcohol. Allow the circuit to fully dry. • TriQuint recommends using a conductive solder paste for attachment. Follow solder paste and reflow oven vendors’ recommendations when developing a solder reflow profile. Typical solder reflow profiles are listed in the table below. • Hand soldering is not recommended. Solder paste can be applied using a stencil printer or dot placement. The volume of solder paste depends on PCB and component layout and should be well controlled to ensure consistent mechanical and electrical performance. • Clean the assembly with alcohol. Typical Solder Reflow Profiles Reflow Profile SnPb Pb Free Ramp-up Rate 3 °C/sec 3 °C/sec Activation Time and Temperature 60 – 120 sec @ 140 – 160 °C 60 – 180 sec @ 150 – 200 °C Time above Melting Point 60 – 150 sec 60 – 150 sec Max Peak Temperature 240 °C 260 °C Time within 5 °C of Peak Temperature 10 – 20 sec 10 – 20 sec Ramp-down Rate 4 – 6 °C/sec 4 – 6 °C/sec Ordering Information Part Package Style TGA4906-SM QFN 5x5 Surface Mount GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 13 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2008 © Rev -