TGA4807 10.7Gb/s Modulator Driver Amplifier Key Features and Performance • • • • • • • Single-ended Input / Output Small Signal Gain 19dB Small Signal Bandwidth 10GHz Wide Drive Range (3V to 11V) 25ps Edge Rates (20/80) Power Dissipation 2.25Watts Die Size: 3.3 x 2 x 0.1 mm Primary Applications Description • Mach-Zehnder Modulator Driver for The TriQuint TGA4807 is part of a series of optical driver amplifiers suitable for a variety of driver applications. The TGA4807 is a medium power wideband AGC amplifier MMIC die that typically provides 19dB small signal gain with 19dB AGC range. RF ports are DC coupled enabling the user to customize system corner frequencies. The TGA4807 is an excellent choice for applications requiring high drive levels. The TGA4807 has demonstrated capability to amplify a 2V input signal to 11Vpp saturated. The TGA4807 requires off-chip decoupling, a DC block and a bias tee. The TGA4807 is available in die form. Metro and Long Haul. Measured Performance TGA4807 Fixtured Data Vd(Rfout)=7V, Id=250mA, (Pdc=1.75W) Vout=11Vpp, Vin = 2Vpp Scale: 2V/div, 15ps/div 10.7Gb/s Vin=2V Lead-free and RoHS compliant Vout=11Vpp Datasheet subject to change without notice 1 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 MAXIMUM RATINGS SYMBOL PARAMETER 6/ VALUE NOTES POSITIVE SUPPLY VOLTAGE Vd Drain Voltage at RF output 7V POSITIVE SUPPLY CURRENT Id Pd Drain Current POWER DISSIPATION 285 mA 1/ 2.2 W 2/ NEGATIVE GATE Vg Voltage Ig Gate Current 0 V to –3 V 5 mA CONTROL GATE Vctrl Ictrl Vd/2 to –3 V Voltage 3/ 5 mA Gate Current RF INPUT PIN TCH Sinusoidal Continuous Wave Power 23 dBm OPERATING CHANNEL TEMPERATURE 200 °C MOUNTING TEMPERATURE 320 °C 4/ 5/ (30 SECONDS) TSTG STORAGE TEMPERATURE -65 to 150 °C Notes: 1/ 2/ 3/ 4/ 5/ Assure the combination of Vd and Id does not exceed maximum power dissipation rating. When operated at this bias condition with a base plate temperature of 70 °C, the median life is 3.4E6 hours. Assure Vctrl never exceeds Vd during bias on and off sequences, and normal operation. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (Tm). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 6/ These ratings represent the maximum operable values for the device. 2 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 THERMAL INFORMATION Parameter Test Condition θJC Thermal Resistance (channel to backside of carrier) VD(RFout)=7V Id=250mA Pdiss (W) TBase (°C) TCH (°C) θJC (°C/W) Tm (HRS) 1.75 70 122 30 1.2E7 Notes: 1. Assumes worst case power dissipation condition where no RF is applied at the input (no power is dissipated in the load). 2. Thermal transfer is conducted thru the bottom of the TGA4807 into the mounting carrier. Design the mounting interface to assure adequate thermal transfer to the base plate. Median Lifetime (Tm) vs. Channel Temperature 1.E+13 Median Lifetime (Hours) 1.E+12 1.E+11 1.E+10 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 FET3 25 50 75 100 125 150 175 200 Channel Temperature ( °C) 3 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 DC PROBE TEST (TA = 25 °C, nominal) NOTES SYMBOL UNITS LIMITS MIN 1/, 2/ |VBVGS| 13 1/, 2/ |VBVGD| 13 MAX V V Notes: 1/ Verified at die level on-wafer probe. 2/ VBVGS and VBVDS are negative. Definitions: VBVGS: Breakdown voltage, Gate to Source VBVGD: Breakdown voltage, Gate to Drain 4 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 RF SPECIFICATIONS (TA = 25°C Nominal) NOTE TEST MEASUREMENT CONDITIONS VALUE MIN SMALL SIGNAL BW 1/, 2/ SMALL-SIGNAL GAIN MAGNITUDE TYP UNITS MAX 10 2 GHz 18 4 GHz 17 6 GHz 16 10 GHz 15 14 GHz 12 GHz dB 1/, 2/ SMALL SIGNAL AGC RANGE 2, 4, 6, 10, and 14GHz 20 dB 1/, 2/ INPUT RETURN LOSS MAGNITUDE 2, 4, 6, 10, and 14GHz 10 dB 1/, 2/ OUTPUT RETURN LOSS MAGNITUDE 2, 4, 6, 10, and 14GHz 12 dB 3/, 4/ SATURATED OUTPUT POWER 2, 4, 6, 10, and 14GHz 25 dBm 3/, 4/ EYE AMPLITUDE Vd(Rfout) = 7V 11.0 Vpp Vd(Rfout) = 6V 10.0 Vd(Rfout) = 5V 9.0 Vd(Rfout) = 4V 8.0 3/, 5/ 3/ ADDITIVE JITTER 5 ps RISE TIME 25 ps Notes: 1/ Verified at package level RF probe. 2/ Bias: V+ = 7 V, adjust Vg1 to achieve Id = 250 mA, Vctrl = +1 V 3/ Verified by design, TGA4807 assembled onto a demonstration board shown on page 9 then tested using the application circuit and bias procedure detailed on pages 7 and 8. 4/ Vin = 2 V, Data Rate = 12.5 Gb/s, Vctrl and Vg are adjusted for maximum output. 5/ Computed using RSS Method where Jpp_additive = SQRT(Jpp_out2 - Jpp_in2) 5 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 Typical Small Signal S-Parameters 6 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 TGA4807 Application Circuit V+ (No Connection) C4 C5 VDT VCTRL 4 6 VD(RFout) C6 TGA4807 RF(in) Bias Tee 13 (PSPL 5545) RF(out) 2 19 DC Block (PSPL 5509) VG C1 C2 C3 Notes: Recommended Components are detailed on page 9. 7 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 Bias Procedure for 11V Output Bias ON Bias OFF 1. Disable the RF source (PPG) 1. Disable the output of the PPG 2. Set VdT=0V Vctrl=0V and Vg=0V 2. Set Vctrl=0V 3. Set Vg=-1.5V 3. Set VdT=0V 4. Increase VdT to 8V observing Id. 4. Set Vg=0V - Assure Id=0mA 5. Set Vctrl=+1.2V - Id should still be 0mA 6. Make Vg more positive until Idd=250mA. - Typical value for Vg is -0.2V 7. Measure V+, adjust VdT such that V+ is 7V. - This will set Vd(RFout) to approximately 7V. - Idd will increase slightly 8. Adjust Vg such that Idd=250mA. 9. Enable the RF source (PPG) - Set Vin=2V 10. Output Swing Adjust: Adjust Vctrl slightly positive to increase output swing or adjust Vctrl slightly negative to decrease the output swing. - Typical value for Vctrl is +1.2V for Vo=11V. 11. Crossover Adjust: Adjust: Vg slightly positive to push the crossover down or adjust Vg slightly negative to push the crossover up. - Typical value for Vg is -0.57V to center crossover with Vo=11V. Notes: 1. Assure Vctrl never exceeds Vd during Bias ON and Bias OFF sequences and during normal operation. 8 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 Recommended Assembly Diagram V+ C5 VCTRL C4 C6 RF(out) and Vd(RFout) RF(in) C1 VG C3 C2 Recommended Components: DESIGNATOR DESCRIPTION MANUFACTURER PART NUMBER C1, C4 1500pF Capacitor SLC Presidio SL5050X7R1522H5 C2, C5 0.1uF Capacitor MLC Ceramic AVX 0603YC104KAT C3 10uF Capacitor MLC Ceramic AVX 0603YC102KAT C6 0.01 uF Capacitor MLC AVX 0603YC103KAT GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 9 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 TGA4807 Detector Application Circuit VREF 5-8V VDET C8 R1 R2 C7 C9 8 4 10 11 6 TGA4807 RF(in) 9 C10 13 RF(out) 2 19 Recommended Components: DESIGNATOR DESCRIPTION MANUFACTURER PART NUMBER R1, R2 40K ohm Resistor Chip Silicon MSI MSBC 2ST-40001F-E C7, C8, C9 100pF Capacitor SLC Ceramic AVX GB015810KA6 C10 .01uF Capacitor MLC Ceramic AVX VL303X7R103M16VG5 10 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 Assembly Process Notes Assembly Notes: Reflow Attachment: Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C Use alloy station or conveyor furnace with reducing atmosphere No fluxes should be utilized Coefficient of thermal expansion matching is critical for long-term reliability Storage in dry nitrogen atmosphere Adhesive Attachment: Organic attachment can be used in low-power applications Curing should be done in a convection oven; proper exhaust is a safety concern Microwave or radiant curing should not be used because of differential heating Coefficient of thermal expansion matching is critical Component Pickup and Placement: Vacuum pencil and/or vacuum collet preferred method of pick up Avoidance of air bridges during placement Force impact critical during auto placement Interconnect: Thermosonic ball bonding is the preferred interconnect technique Force, time, and ultrasonics are critical parameters Aluminum wire should not be used Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire Maximum stage temperature: 200C 11 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev - TGA4807 TGA4807 Mechanical Drawing 2.932 (0.115) 3.159 (0.124) 6 7 8 5 4 3.181 (0.125) 2.686 (0.106) 3 2.475 (0.097) 0.767 (0.030) 0.381 (0.015) 2.000 (0.079) 1.868 (0.074) 1.870 (0.074) 1.343 (0.053) 9 0.934 (0.037) 0.437 (0.017) 2 10 0.928 (0.037) 1 0.174 (0.007) 12 11 0.000 (0.000) 3.335 (0.131) 3.206 (0.126) 2.832 (0.111) 3.014 (0.119) 0.154 (0.006) 0.130 (0.005) 0.000 (0.000) Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) RF GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond Bond pad pad pad pad pad pad pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 #7 #8 #9 #10 #11 #12 (RF In) (Vctrl) (V+) (V+ aux) (Vref) (A) (B) (V det) (RF Out) (Vctrl aux) (Vg aux) (Vg) 0.155 0.106 0.368 0.368 0.095 0.095 0.095 0.095 0.155 0.106 0.155 0.155 x x x x x x x x x x x x 0.155 0.157 0.109 0.109 0.095 0.095 0.095 0.095 0.155 0.157 0.155 0.155 (0.006 (0.004 (0.014 (0.014 (0.004 (0.004 (0.004 (0.004 (0.006 (0.004 (0.006 (0.006 x x x x x x x x x x x x 0.006) 0.006) 0.004) 0.004) 0.004) 0.004) 0.004) 0.004) 0.006) 0.006) 0.006) 0.006) 12 TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 [email protected] May 2009 © Rev -