Product specification 2PB709A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 0.55 Low voltage (max. 45 V). +0.1 1.3-0.1 +0.1 2.4-0.1 Low current (max. 100 mA) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -45 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -6 V Collector current (DC) IC -100 mA Peak collector current ICM -200 mA Peak base current IBM -100 mA mW Ptot 250 Storage temperature Tstg -65 to +150 Junction temperature Tj 150 Operating ambient temperature Tamb -65 to +150 Thermal resistance from junction to ambient Rth j-a 500 Total power dissipation(Tamb 25 ; *) K/W * Transistor mounted on an FR4 PCB. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification 2PB709A Electrical Characteristics Ta = 25 Parameter Symbol ICBO Collector cut-off current Testconditons IE = 0; VCB = -45 V IE Emitter cut-off current DC current gain Min = 0; VCB = -45 V; Tj = 150 IEBO IC = 0; VEB = -5 V hFE IC = -2 mA; VCE = -10 V 2PB709AQ 2PB709AR 2PB709AS Transition frequency Cc IE = ie = 0; VCB = -10 V; f = 1 MHz fT IC = -1 mA; VCE = -10 V; f = 100 MHz 2PB709AQ 2PB709AR 300 ìs; ä nA -5 ìA -10 nA 160 260 340 290 460 -500 mV 5 pF 60 2PB709AS * Pulse test: tp Unit -10 210 VCE(sat) IC = -100 mA; IB = -10 mA * Collector-emitter saturation voltage Collector capacitance Max 70 MHz 80 0.02. hFE Classification TYPE 2PB709AQ 2PB709AR 2PB709AS Marking BQ BR BS http://www.twtysemi.com [email protected] 4008-318-123 2 of 2