TYSEMI 2SB1323

Transistors
SMD Type
Product specification
2SB1323
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between collector and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Electrical Connection
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-40
V
Collector-emitter voltage
VCEO
-30
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-3
A
Collector current (pulse)
ICP
-5
A
Collector dissipation
PC *
1.5
W
Tj
150
Tstg
-55 to +150
Jumction temperature
Storage temperature
2
* Mounted on ceramic board 250mm X0.8mm
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
SMD Type
Product specification
2SB1323
Electrical Characteristics Ta = 25
Parameter
Symbol
Collector cutoff current
ICBO
DC current Gain
hFE
Testconditons
Min
Typ
VCB = 30V , IE = 0
VCE = -2V , IC = -0.5A
70
VCE = -2V , IC = -2A
50
Max
Unit
-1
ìA
fT
VCE = -2V , IC = -0.5A
100
MHz
Cob
VCB = -10V , f = 1MHz
55
pF
VCE(sat)
IC = -1A , IB = -50mA
-0.18
-0.4
Base-emitter on state voltage
VBE(ON)
VCE = -2A , IC = -1A
-2
-5
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-40
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -10ìA , RBE =
-40
V
Base-emitter on state voltage
V(BR)CEO IC = -10mA , RBE =
-30
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Diode forward voltage
VF
Base-emitter resistance
RBE
Base resistance
R1
-1
V
V
IF=0.5A
1.5
0.8
120
V
160
V
KÙ
200
Ù
Marking
Marking
BK
http://www.twtysemi.com
[email protected]
4008-318-123
2of 2