Transistors SMD Type Product specification 2SD1621 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 6 V Collector current IC 2 A Collector current (pulse) ICP 5 A PC 500 mW PC * 1.3 W Collector dissipation Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on ceramic board(250mm2X0.8mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors SMD Type Product specification 2SD1621 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 20 V, IE=0 Emitter cutoff current IEBO VEB = 4 V, IC=0 DC current gain hFE VCE = 2 V , IC = 100 mA fT VCE = 10 V , IC = 50 mA Cob VCB = 10 V , f = 1.0MHz Gain bandwidth product Output capacitance Min Typ 100 Max Unit 0.1 ìA 0.1 ìA 560 150 MHz 19 pF Collector-emitter saturation voltage VCE(sat) IC = 1.5 A , IB = 75 mA 0.18 0.4 V Base-emitter saturation voltage VBE(sat) IC = 1.5 A , IB = 75 mA 0.85 1.2 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 30 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 25 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V Turn-on timie ton 60 ns Storage time tstg 500 ns Turn-off time tf 25 ns hFE Classification DD Marking Rank R S T U hFE 100 200 140 280 200 400 280 560 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2