Transistors Diodes SMD Type Product specification 2SD1628 Features Low saturation voltage. High hFE. Large current capacity. Very small size making it easy to provide highdensity, small-sized hybrid IC’ s. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 6 V Collector current IC 5 A Collector current (pulse) ICP 8 A PC 500 mW W Collector dissipation PC * 1.5 Junction temperature Tj 150 Storage temperature Tstg -55 to +150 * Mounted on ceramic board(250mm2X0.8mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors Diodes SMD Type Product specification 2SD1628 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 50 V, IE=0 100 nA Emitter cutoff current IEBO VEB = 5 V, IC=0 100 nA DC current gain hFE VCE = 2 V , IC = 0.5 A Gain bandwidth product Output capacitance 120 560 fT VCE = 10 V , IC = 50 mA 120 MHz Cob VCB = 10 V , f = 1.0MHz 45 pF VCE(sat) IC = 3 A , IB = 60 mA Collector-emitter saturation voltage Base-emitter saturation voltage VBE(sat) IC = 3 A , IB = 60 mA 500 mV 1.5 V Collector-base breakdown voltage V(BR)CBO IC = 10ìA , IE = 0 60 V Collector-emitter breakdown voltage V(BR)CEO IC = 1mA , RBE = 20 V Emitter-base breakdown voltage V(BR)EBO IE = 10ìA , IC = 0 6 V Turn-on timie ton 30 ns Storage time tstg 300 ns Turn-off time tf 40 ns hFE Classification DK Marking Rank E F G hFE 120 200 160 320 280 560 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2