TYSEMI 2SC3929

Transistors
IC
SMD Type
Product specification
2SC3929
Features
Low noise voltage NV.
High forward current transfer ratio hFE.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
35
V
Collector-emitter voltage
VCEO
35
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Peak collector current
ICP
100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
35
V
Collector-emitter voltage
VCEO
IC = 2 mA, IB = 0
35
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
5
Base-emitter voltage
VBE
VCE = 1 V, IC = 100 mA
Collector-base cutoff current
ICBO
VCB = 10 V, IE = 0
Collector-emitter cutoff current
ICEO
VCE = 10 V, IB = 0
Forward current transfer ratio
hFE
VCE = 5 V, IC = 2 mA
V
0.7
180
Transition frequency
fT
Noise voltage
0.1
ìA
1
ìA
0.6
VCB = 5 V, IE = ?2 mA, f = 200 MHz
100
VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg
= 100 kÙ, Function = FLAT
NV
V
700
VCE(sat) IC = 100 mA, IB = 10 mA
Collector-emitter saturation voltage
1.0
V
MHz
150
mV
hFE Classification
Marking
SR
SS
ST
hFE
180 360
260 520
360 700
http://www.twtysemi.com
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4008-318-123
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