Transistors IC SMD Type Product specification 2SD1821A Features High collector-emitter voltage VCEO Low noise voltage NV 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 185 V Collector-emitter voltage VCEO 185 V Emitter-base voltage VEBO 5 V Peak collector current ICP 100 A Collector current IC 50 A Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Collector-emitter voltage VCEO IC = 100 ìA, IB = 0 185 Emitter-base voltage VEBO IE = 10 ìA, IC = 0 5 Collector-base cutoff current ICBO VCB = 100 V, IE = 0 Forward current transfer ratio hFE VCE = 5 V, IC = 10 mA Collector-emitter saturation voltage Typ fT Collector output capacitance Cob Noixe voltage NV Unit V V 1 130 ìA 330 VCE(sat) IC = 30 mA, IB = 3 mA Transition frequency Max V VCB = 10 V, IE = -10 mA, f = 200 MHz 150 MHz VCB = 10 V, IE = 0, f = 1 MHz 2.3 pF 150 mV VCE = 10 V, IC = 1 mA, GV = 80 dB, Rg = 100KÙ, Function = FLAT hFE Classification L Marking Rank Q R hFE 130 220 185 330 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1