KEXIN 2SA1531A

Transistors
SMD Type
Silicon PNP Epitaxial Planar Type
2SA1531A
Features
Low noise voltage NV.
High forward current transfer ratio hFE.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-55
V
Collector-emitter voltage
VCEO
-55
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-50
mA
Peak collector current
ICP
-100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base voltage
VCBO
IC = -10 ìA, IE = 0
-55
V
Collector-emitter voltage
VCEO
IC = -2 mA, IB = 0
-55
V
Emitter-base voltage
VEBO
IE = -10 ìA, IC = 0
-5
V
Base-emitter voltage
VBE
VCE = -1 V, IC = -100 mA
-1
V
Collector-base cutoff current
ICBO
VCB = -10 V, IE = 0
-0.1
ìA
Collector-emitter cutoff current
ICEO
VCE = -10 V, IB = 0
-1
ìA
hFE
VCE = -5 V, IC = -2 mA
Forward current transfer ratio
-0.7
180
700
VCE(sat) IC = -100 mA, IB = -10 mA
Collector-emitter saturation voltage
Transition frequency
fT
Noise voltage
Cob
VCB = -5 V, IE = 2 mA, f = 200 MHz
VCE = -10 V, IC = -1 mA, GV = 80 dB,
Rg = 100 k? , Function = FLAT
-0.6
150
V
MHz
150
mV
hFE Classification
H
Marking
Rank
R
S
T
hFE
180 360
260 520
360 700
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