Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SA1531A Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -55 V Collector-emitter voltage VCEO -55 V Emitter-base voltage VEBO -5 V Collector current IC -50 mA Peak collector current ICP -100 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage VCBO IC = -10 ìA, IE = 0 -55 V Collector-emitter voltage VCEO IC = -2 mA, IB = 0 -55 V Emitter-base voltage VEBO IE = -10 ìA, IC = 0 -5 V Base-emitter voltage VBE VCE = -1 V, IC = -100 mA -1 V Collector-base cutoff current ICBO VCB = -10 V, IE = 0 -0.1 ìA Collector-emitter cutoff current ICEO VCE = -10 V, IB = 0 -1 ìA hFE VCE = -5 V, IC = -2 mA Forward current transfer ratio -0.7 180 700 VCE(sat) IC = -100 mA, IB = -10 mA Collector-emitter saturation voltage Transition frequency fT Noise voltage Cob VCB = -5 V, IE = 2 mA, f = 200 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB, Rg = 100 k? , Function = FLAT -0.6 150 V MHz 150 mV hFE Classification H Marking Rank R S T hFE 180 360 260 520 360 700 www.kexin.com.cn 1