TYSEMI 2SD2210

Transistors
IC
SMD Type
Product specification
2SD2210
Features
Low collector-emitter saturation voltage VCE(sat)
Low on resistance ron.
High forward current transfer ratio hFE.
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
25
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
12
V
Collector current
IC
1
A
Peak collector current
ICP
0.5
A
Collector power dissipation
PC
1
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
2SD2210
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
1
ìA
Collector-base cutoff current
ICBO
VCB = 25 V, IE = 0
Collector-base voltage
VCBO
IC = 10 ìA, IE = 0
25
V
Collector-emitter voltage
VCEO
IC = 1 mA, IB = 0
20
V
Emitter-base voltage
VEBO
IE = 10 ìA, IC = 0
12
VCE = 2 V, IC = 0.5 A
200
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE(sat) IC = 0.5 A, IB = 20 mA
Base-emitter saturation voltage
VBE(sat) IC = 0.5 A, IB = 20 mA
Transition frequency
fT
Collector output capacitance
Cob
ON resistance
Ron
V
800
0.13
0.4
1.2
V
V
VCB = 10 V, IE = -50 mA, f = 200 MHz
200
MHz
VCB = 10 V, IE = 0, f = 1 MHz
10
pF
1.0
Ù
hFE Classification
IK
Marking
Rank
R
S
T
hFE
200 350
300 500
400 800
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2