TYSEMI 2SD1819A

Transistors
IC
SMD Type
Product specification
2SD1819A
Features
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Peak collector current
ICP
200
mA
Collector current
IC
100
mA
Collector power dissipation
PC
150
mW
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
ICBO
VCB = 20V, IE = 0
0.1
ìA
ICEO
VCE = 10V, IB = 0
100
ìA
Collector-base voltage
VCBO
IC = 10ìA, IE = 0
60
V
Collector-emitter voltage
VCEO
IC = 2mA, IB = 0
50
V
Emitter-base voltage
VEBO
IE = 10ìA, IC = 0
7
V
Collector cutoff current
Forward current transfer ratio
hFE
Collector-emitter saturation voltage
VCE = 10V, IC = 2mA
VCE(sat) IC = 100mA, IB = 10mA
Transition frequency
fT
Collector output capacitance
Cob
160
460
0.1
0.3
V
VCB = 10V, IE =-2mA, f = 200MHz
150
MHz
VCB = 10V, IE = 0, f = 1MHz
3.5
pF
hFE Classification
Marking
ZQ
ZR
ZS
Rank
Q
R
S
hFE
160 260
210 340
290 460
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4008-318-123
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