Transistors IC SMD Type Product specification 2SD1328 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low ON resistance Ron. 1 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Low collector-emitter saturation voltage VCE(sat). +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 High foward current transfer ratio hFE. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V Collector current IC 1 A Peak collector current ICP 0.5 A Collector power dissipation PC 200 mW Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Collector cutoff current ICBO VCB = 25 V, IE = 0 Min Typ Max Unit 100 nA Collector-base voltage VCBO IC = 10 ìA, IE = 0 25 V Collector-emitter voltage VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage VEBO IE = 10 ìA, IC = 0 12 VCE = 2 V, IC = 0.5 A 200 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) IC = 0.5 A, IB = 20 mA Base-emitter saturation voltage VBE(sat) IC = 0.5 A, IB = 50 mA Transition frequency fT Collector output capacitance Cob ON resistanse Ron V 800 0.13 0.4 1.2 V V VCB = 10 V, IE = -50 mA , f = 200 MHz 200 MHz VCB = 10V , IE = 0 , f = 1.0MHz 10 pF 1.0 Ù hFE Classification 1D Marking Rank R S T hFE 200 350 300 500 400 800 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1