IC SMD Type Product specification 2SD1898 Features High VCEO, VCEO=80V . High IC, IC=1A (DC) . Good hFE linearity . Low VCE (sat) . Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V 1 A IC Collector current 1 IC (Pulse) * 2 A PC 0.5 W PC *2 2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Collector power dissipation *1. Pw=20ms. *2. 40X40X0.7mm Ceramic board. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base voltage BVCBO IC=50ìA 120 V Collector-emitter voltage BVCEO IC=1mA 80 V Emitter-base voltage BVEBO IE=50ìA 5 V Collector cutoff current ICBO VCB=100V Emitter cutoff current IEBO VEB=4V Forward current transfer ratio hFE VCE=3V,IC=0.5A Collector-emitter saturation voltage VCE(sat) IC=500mA,IB=20mA Transition frequency fT Output capacitance Cob 82 1 ìA 1 ìA 390 0.15 0.4 V VCE=10V, IE= -50mA, f=100MHz 100 MHz VCB=10V, IE=0A, f=1MHz 20 pF hFE Classification DF Marking Rank P Q R hFE 82 180 120 270 180 390 http://www.twtysemi.com [email protected] 4008-318-123 1 of 1