TYSEMI 2SK1582

MOSFET
SMD Type
Product specification
2SK1582
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
Features
0.4
3
1
Possible to reduce the number of parts by omitting the bias resistor
0.55
+0.1
1.3-0.1
Not necessry to consider driving current because of its thgh input impedance.
+0.1
2.4-0.1
Can be driven by Ics having a 5V single power supply.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
+0.1
0.38-0.1
0-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
20
V
ID
200
mA
Drain current (DC)
400
Drain current(pulse) *
ID
Power dissipation
PD
200
Channel temperature
Tch
150
Tstg
-55 to +150
Storage temperature
* PW
10ms, duty cycle
mA
mW
5%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=30V,VGS=0
Gate leakage current
IGSS
VGS= 20V,VDS=0
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
VDS=5.0V,ID=10mA
20
RDS(on)
Input capacitance
Ciss
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Turn-off delay time
1.2
1.5
60
Unit
A
A
V
ms
VGS=4.0V,ID=10mA
2.2
5.0
VGS=10V,ID=10mA
1.4
3.0
28
pF
30
pF
7
pF
td(on)
55
ns
tr
200
ns
180
ns
250
ns
td(off)
Fall time
Max
10
0.9
Yfs
Typ
10
VGS(off) VDS=5.0V,ID=10 A
Output capacitance
Rise time
Min
VDS=5.0V,VGS=0,f=1MHZ
ID=10mA,VGS(on)=5.0V,RL=500
,VDD=5.0V,RG=10
tf
Marking
Marking
G15
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 1