MOSFET SMD Type MOS Fied Effect Transistor 2SJ203 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Possible to reduce the number of parts by omitting the bias resisor. 0.55 Not necessary to consider driving current thanks to hight input impedance. +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 3V poer supply. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1 GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -16 V VDS=0 VGSS 7 V Drain current (DC) ID 200 mA Drain current(pulse) * ID 400 mA Gate to source voltage Power dissipation PD 200 Channel temperature Tch -55 to 80 Storage temperature Tstg -55 to +150 * PW 10 ms; d mW 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-16V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Drain to source on-state resistance Yfs RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Max Unit -10 A 10 A VDS=-3V,ID=-10mA -1.0 -1.6 20 48 -2.2 A V ms VGS=-2.5V,ID=-1mA 15 23 VGS=-4.0V,ID=-1mA 7 10 28 pF 32 pF Crss 6 pF td(on) 180 ns tr 420 ns 100 ns 200 ns td(off) Fall time Typ 3V,VDS=0 VGS(off) VDS=-3V,ID=-1 Forward transfer admittance Min tf VDS=-3.0V,VGS=0,f=1MHZ VGS(on)=-3V,RG=10 10mA RL=300 ,VDD=-3.0V,ID=- Marking Marking H14 www.kexin.com.cn 1