KEXIN 2SJ203

MOSFET
SMD Type
MOS Fied Effect Transistor
2SJ203
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
Possible to reduce the number of parts by omitting the bias resisor.
0.55
Not necessary to consider driving current thanks to hight input impedance.
+0.1
1.3-0.1
+0.1
2.4-0.1
Directly driven by Ics having a 3V poer supply.
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage VGS=0
VDSS
-16
V
VDS=0
VGSS
7
V
Drain current (DC)
ID
200
mA
Drain current(pulse) *
ID
400
mA
Gate to source voltage
Power dissipation
PD
200
Channel temperature
Tch
-55 to 80
Storage temperature
Tstg
-55 to +150
* PW
10 ms; d
mW
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Drain cut-off current
IDSS
VDS=-16V,VGS=0
Gate leakage current
IGSS
VGS=
Gate cut-off voltage
Drain to source on-state resistance
Yfs
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Max
Unit
-10
A
10
A
VDS=-3V,ID=-10mA
-1.0
-1.6
20
48
-2.2
A
V
ms
VGS=-2.5V,ID=-1mA
15
23
VGS=-4.0V,ID=-1mA
7
10
28
pF
32
pF
Crss
6
pF
td(on)
180
ns
tr
420
ns
100
ns
200
ns
td(off)
Fall time
Typ
3V,VDS=0
VGS(off) VDS=-3V,ID=-1
Forward transfer admittance
Min
tf
VDS=-3.0V,VGS=0,f=1MHZ
VGS(on)=-3V,RG=10
10mA RL=300
,VDD=-3.0V,ID=-
Marking
Marking
H14
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