MOSFET SMD Type MOS Field Effect Transistor 2SK1133 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Not necessary to consider driving current because of 0.4 3 Directly driven by Ics having a 5V power source. 1 Possible to reduce the number of parts by omitting the biasresistor. 0.55 its high input impedance. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 50 V Gate to source voltage VGSS 7.0 V Drain current (DC) ID 100 mA Drain current(pulse) * ID 200 mA Power dissipation PD 200 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10ms, duty cycle mW 50% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=50V,VGS=0 Gate leakage current IGSS VGS= Gate to source cutoff voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Typ Max -10 7V,VDS=0 VGS(off) VDS=5.0V,ID=1 Yfs Min A VDS=5.0V,ID=20mA RDS(on) VGS=4V,ID=20mA Ciss VDS=5.0V,VGS=0,f=1MHZ 10 1.0 20 1.7 2.0 40 16 Unit A A V ms 50 7 pF 6 pF 2 pF Output capacitance Coss Reverse transfer capacitance Crss Turn-on delay time td(on) 6 ns tr 25 ns td(off) 36 ns tf 35 ns Rise time Turn-off delay time Fall time VGS(on)=0,VDD=5V,f=1MHz Marking Marking G11 www.kexin.com.cn 1