MOSFET SMD Type MOS Fied Effect Transistor 2SJ209 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 its high input impedance. 0.55 Not necessary to consider driving current because of +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 1.Base 1 GATE 2.Emitter 2 SOURCE +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 Possible to reduce the number of parts by omitting the biasresistor. 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VGS=0 VDSS -100 V VDS=0 VGSS 16 V Drain current (DC) ID 100 mA Drain current(pulse) * ID 200 mA Gate to source voltage Power dissipation PD 200 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW 10 ms; d mW 50%. Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Drain cut-off current IDSS VDS=-100V,VGS=0 Gate leakage current IGSS VGS= Gate cut-off voltage Drain to source on-state resistance Yfs RDS(on) A VDS=-5.0V,ID=-10mA VGS=-4.0V,ID=-10mA VGS=-10V,ID=-10mA Input capacitance Ciss Output capacitance Coss Typ 16V,VDS=0 VGS(off) VDS=-5.0V,ID=-1 Forward transfer admittance Min VDS=-5.0V,VGS=0,f=1MHZ -1.5 -2.0 15 22 Max Unit -10 A 10 A -2.5 V ms 60 100 37 60 17 pF 9 pF Reverse transfer capacitance Crss 1 pF Turn-on delay time td(on) 45 ns 75 ns 25 ns 80 ns Rise time tr Turn-off delay time td(off) Fall time tf VGS(on)=-4V,RG=10 10mA RL=500 ,VDD=-5V,ID=- Marking Marking H17 www.kexin.com.cn 1