Transistors IC SMD Type Product specification 2SK3354 TO-263 +0.1 1.27-0.1 RDS(on)2 = 12 m MAX. (VGS = 4 V, ID = 42 A) 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low Ciss: Ciss = 6300 pF TYP. 5.60 MAX. (VGS = 10 V, ID = 42 A) Built-in gate protection diode +0.2 4.57-0.2 +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on)1 = 8.0 m +0.2 8.7-0.2 Super low on-state resistance: +0.1 1.27-0.1 +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 Features Unit: mm 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS(AC) 20 V ID 83 A Idp * 332 A Drain current Power dissipation TA=25 1.5 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 100 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Drain cut-off current IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=41A 35 59 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance RDS(on) Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge A 10 VGS=10V,ID=42A 2.5 A V S 6.3 8.0 m 8.0 12 m 6300 pF 1000 pF Crss 490 pF ton 100 ns 1500 ns VDS=10V,VGS=0,f=1MHZ ID=42A,VGS(on)=10V,RG=10 ,VDD=30V QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com Unit 10 VGS=4V,ID=42A Input capacitance Max VDD = 48V, VGS = 10 V, ID = 83A [email protected] 4008-318-123 300 ns 440 ns 106 nC 20 nC 30 nC 1 of 1