IC Transistors SMD Type Product specification 2SK3224 TO-252 +0.2 9.70-0.2 Low Ciss : Ciss = 790 pF TYP. Built-in Gate Protection Diode +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 +0.8 0.50-0.7 3.80 MAX. (VGS = 4.0 V, ID = 10 A) Unit: mm +0.1 2.30-0.1 +0.15 5.55-0.15 RDS(on)2 = 60 m +0.15 1.50-0.15 MAX. (VGS = 10 V, ID = 10 A) +0.15 0.50-0.15 RDS(on)1 = 40 m +0.15 6.50-0.15 +0.2 5.30-0.2 0.127 max +0.25 2.65-0.1 Low On-State Resistance +0.28 1.50-0.1 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDSS 60 V Drain to source voltage VGSS(AC) Gate to source voltage 20 VGSS(DC) 20 A Idp * 70 A TC=25 25 PD W 1.0 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW V ID Drain current Power dissipation +20,-10 V 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Symbol Testconditons IDSS VDS=60V,VGS=0 Min Typ IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1..0 1.5 Forward transfer admittance Yfs VDS=10V,ID=10A 8.0 15 RDS(on) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Unit 10 Gate to source cut off voltage Drain to source on-state resistance Max A 10 2.0 A V S VGS=10V,ID=10A 24 40 m VGS=4V,ID=10A 33 60 m VDS=10V,VGS=0,f=1MHZ 790 pF 240 pF 100 pF Turn-on delay time ton 19 ns Rise time tr 165 ns Turn-off delay time toff 62 ns Fall time tf 71 ns http://www.twtysemi.com ID=10A,VGS(on)=10V,RG=10 ,VDD=30V [email protected] 4008-318-123 1 of 1