TYSEMI 2SK3224

IC
Transistors
SMD Type
Product specification
2SK3224
TO-252
+0.2
9.70-0.2
Low Ciss : Ciss = 790 pF TYP.
Built-in Gate Protection Diode
+0.1
0.80-0.1
2.3
+0.1
0.60-0.1
+0.8
0.50-0.7
3.80
MAX. (VGS = 4.0 V, ID = 10 A)
Unit: mm
+0.1
2.30-0.1
+0.15
5.55-0.15
RDS(on)2 = 60 m
+0.15
1.50-0.15
MAX. (VGS = 10 V, ID = 10 A)
+0.15
0.50-0.15
RDS(on)1 = 40 m
+0.15
6.50-0.15
+0.2
5.30-0.2
0.127
max
+0.25
2.65-0.1
Low On-State Resistance
+0.28
1.50-0.1
Features
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDSS
60
V
Drain to source voltage
VGSS(AC)
Gate to source voltage
20
VGSS(DC)
20
A
Idp *
70
A
TC=25
25
PD
W
1.0
TA=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
V
ID
Drain current
Power dissipation
+20,-10
V
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Symbol
Testconditons
IDSS
VDS=60V,VGS=0
Min
Typ
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1..0
1.5
Forward transfer admittance
Yfs
VDS=10V,ID=10A
8.0
15
RDS(on)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Unit
10
Gate to source cut off voltage
Drain to source on-state resistance
Max
A
10
2.0
A
V
S
VGS=10V,ID=10A
24
40
m
VGS=4V,ID=10A
33
60
m
VDS=10V,VGS=0,f=1MHZ
790
pF
240
pF
100
pF
Turn-on delay time
ton
19
ns
Rise time
tr
165
ns
Turn-off delay time
toff
62
ns
Fall time
tf
71
ns
http://www.twtysemi.com
ID=10A,VGS(on)=10V,RG=10 ,VDD=30V
[email protected]
4008-318-123
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