IC SMD Type Product specification 2SK3507 TO-252 Features 4.5 V drive available +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Low on-state resistance +0.8 0.50-0.7 Built-in G-S protection diode 2.3 Surface mount package available +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 +0.1 0.80-0.1 +0.28 1.50-0.1 +0.2 9.70-0.2 QG = 8.5 nC TYP. (VDD = 24 V, VGS = 10 V, ID = 22 A) 3.80 MAX. (VGS = 10 V, ID = 11 A) Low gate charge +0.15 0.50-0.15 RDS(on)1 = 45 m Unit: mm +0.1 2.30-0.1 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 30 V Gate to source voltage VGSS 16 ID 22 A Idp * 45 A Drain current Power dissipation TC=25 20 PD W 1.5 TA=25 Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW V 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=30V,VGS=0 Gate leakage current IGSS VGS= 16V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 6 Gate cutoff voltage Forward transfer admittance Drain to source on-state resistance Typ Max Unit 10 A 1 A 2.5 V Yfs VDS=4.0V,ID=11A RDS(on)1 VGS=10V,ID=11A 28 45 m RDS(on)2 VGS=4.5V,ID=11A 46 76 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance S 360 pF 125 pF Crss 65 pF Turn-on delay time ton 6.6 ns Rise time tr 3.6 ns Turn-off delay time toff 16 ns Fall time Total Gate Charge ID=11A,VGS(on)=10V,RL=10 ,VDD=15V tf 5.3 ns QG 8.5 nC 2 nC 2.1 nC Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com VDS=10V,VGS=0,f=1MHZ ID =22A, VDD =24V, VGS = 10 V [email protected] 4008-318-123 1 of 1