TYSEMI 2SK3713

Transistors
IC
SMD Type
Product specification
2SK3713
+0.1
1.27-0.1
TO-263
Features
Super high VGS(off): VGS(off) = 3.8 to 5.8 V
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
Low QG: QG = 25 nC TYP.
5.60
+0.2
15.25-0.2
+0.2
8.7-0.2
Low Crss: Crss = 6.5 pF TYP.
0.1max
+0.1
1.27-0.1
MAX. (VGS = 10 V, ID = 5 A)
+0.2
2.54-0.2
+0.1
0.81-0.1
2.54
+0.2
2.54-0.2
RDS(on) = 0.83
+0.2
5.28-0.2
Low on-state resistance:
5.08
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
600
V
Gate to source voltage
VGSS
30
V
ID
10
A
35
A
Drain current
Idp *
Power dissipation
TA=25
1.5
PD
W
100
TC=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
Unit
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Drain cut-off current
IDSS
VDS=600V,VGS=0
10
Gate leakage current
IGSS
VGS= 30V,VDS=0
100
VGS(off)
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
VDS=10V,ID=1mA
3.8
4.8
Yfs
VDS=10V,ID=5A
2.5
4.6
RDS(on)
VGS=10V,ID=5A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
Rise time
Turn-off delay time
toff
Fall time
0.68
5.8
Unit
A
nA
V
S
0.83
1460
pF
250
pF
6.5
pF
ton
26
ns
tr
8.5
ns
30
ns
VDS=10V,VGS=0,f=1MHZ
ID=5A,VGS(on)=10V,RG=0 ,VDD=150V
tf
5.2
ns
Total Gate Charge
QG
25
nC
Gate to Source Charge
QGS
12
nC
Gate to Drain Charge
QGD
9
nC
http://www.twtysemi.com
VDD = 450V
VGS = 10 V
ID =10A
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4008-318-123
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