MOSFET IC SMD Type Product specification 2SK3572 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 Low gate charge QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 80 A) Built-in gate protection diode +0.2 2.54-0.2 +0.2 15.25-0.2 MAX. (VGS = 10 V, ID = 40A) +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 RDS(on)1 = 5.7m +0.2 8.7-0.2 Low on-state resistance, 5.60 4.5V drive available. 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain Surface mount device available 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 20 V Gate to source voltage VGSS Drain current Power dissipation TC=25 20 V ID 80 A Idp * 300 A 52 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.5 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=20V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 Yfs VDS=10V,ID=40A 15 RDS(on)1 VGS=10V,ID=40A RDS(on)2 VGS=4.5V,ID=40A Gate cut off voltage Forward transfer admittance Drain to source on-state resistance Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf Total Gate Charge Max Unit 10 A 10 2.5 A V S 4.4 5.7 m 7.4 9.9 m 1700 pF 700 pF Crss 250 pF ton 16 ns 14 ns QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com Typ VDS=10V,VGS=0,f=1MHZ ID=40A,VGS(on)=10V,RG=10 ,VDD=10V VDD = 16 V VGS = 10 V ID = 80 A [email protected] 50 ns 9 ns 32 nC 7.1 nC 7.7 nC 4008-318-123 1 of 1