TYSEMI 2SK3367

IC
Transistors
SMD Type
Product specification
2SK3367
TO-252
Features
+0.15
1.50-0.15
+0.15
6.50-0.15
+0.2
5.30-0.2
Unit: mm
+0.1
2.30-0.1
+0.8
0.50-0.7
Low on-resistance
MAX. (VGS = 4.0 V, ID = 18 A)
Low Ciss : Ciss = 2800 pF TYP.
2.3
Built-in gate protection diode
+0.1
0.60-0.1
+0.15
5.55-0.15
0.127
max
+0.25
2.65-0.1
RDS(on)3 = 14.0 m
+0.1
0.80-0.1
+0.28
1.50-0.1
MAX. (VGS = 4.5 V, ID = 18 A)
+0.2
9.70-0.2
RDS(on)2 = 12.0 m
3.80
MAX. (VGS = 10 V, ID = 18 A)
+0.15
0.50-0.15
RDS(on)1 = 9.0 m
1 Gate
+0.15
4.60-0.15
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
20
V
ID
36
A
144
A
Drain current
Idp *
Power dissipation
TC=25
40
PD
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
W
1.0
TA=25
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Symbol
Testconditons
IDSS
VDS=30V,VGS=0
Min
Typ
Max
Unit
10
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1.5
13
A
10
2.0
2.5
26
A
V
Yfs
VDS=10V,ID=18A
RDS(on)1
VGS=10V,ID=18A
7.3
9.0
S
m
RDS(on)2
VGS=4.5V,ID=18A
9.0
12.0
m
RDS(on)3
VGS=4.0V,ID=18A
9.7
14.0
m
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Turn-on delay time
Rise time
tr
Turn-off delay time
toff
165
ns
Fall time
tf
210
ns
QG
49
nC
10
nC
14
nC
Total Gate Charge
2800
pF
880
pF
Crss
400
pF
ton
75
ns
1130
ns
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
http://www.twtysemi.com
VDS=10V,VGS=0,f=1MHZ
ID=18A,VGS(on)=10V,RG=10 ,VDD=15V
ID = 36 A, VDD = 24 V, VGS = 10 V
[email protected]
4008-318-123
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