IC Transistors SMD Type Product specification 2SK3367 TO-252 Features +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Low on-resistance MAX. (VGS = 4.0 V, ID = 18 A) Low Ciss : Ciss = 2800 pF TYP. 2.3 Built-in gate protection diode +0.1 0.60-0.1 +0.15 5.55-0.15 0.127 max +0.25 2.65-0.1 RDS(on)3 = 14.0 m +0.1 0.80-0.1 +0.28 1.50-0.1 MAX. (VGS = 4.5 V, ID = 18 A) +0.2 9.70-0.2 RDS(on)2 = 12.0 m 3.80 MAX. (VGS = 10 V, ID = 18 A) +0.15 0.50-0.15 RDS(on)1 = 9.0 m 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V ID 36 A 144 A Drain current Idp * Power dissipation TC=25 40 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Drain cut-off current Gate leakage current Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Symbol Testconditons IDSS VDS=30V,VGS=0 Min Typ Max Unit 10 IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 13 A 10 2.0 2.5 26 A V Yfs VDS=10V,ID=18A RDS(on)1 VGS=10V,ID=18A 7.3 9.0 S m RDS(on)2 VGS=4.5V,ID=18A 9.0 12.0 m RDS(on)3 VGS=4.0V,ID=18A 9.7 14.0 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff 165 ns Fall time tf 210 ns QG 49 nC 10 nC 14 nC Total Gate Charge 2800 pF 880 pF Crss 400 pF ton 75 ns 1130 ns Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com VDS=10V,VGS=0,f=1MHZ ID=18A,VGS(on)=10V,RG=10 ,VDD=15V ID = 36 A, VDD = 24 V, VGS = 10 V [email protected] 4008-318-123 1 of 1