IC MOSFET SMD Type Product specification 2SK3484 TO-252 +0.1 0.80-0.1 2.3 +0.1 0.60-0.1 3.80 MAX. (VGS = 4.5 V, ID = 8A) +0.8 0.50-0.7 +0.15 5.55-0.15 RDS(on)2 = 148m Low Ciss: Ciss = 900 pF TYP. Unit: mm +0.1 2.30-0.1 0.127 max +0.25 2.65-0.1 MAX. (VGS = 10 V, ID = 8A) +0.2 9.70-0.2 RDS(on)1 = 125m +0.15 0.50-0.15 Super low on-state resistance: +0.15 1.50-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.28 1.50-0.1 Features 1 Gate +0.15 4.60-0.15 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 100 V Gate to source voltage VGSS 20 V ID 16 A Idp * 22 A Drain current Power dissipation TC=25 30 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 1.0 TA=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Drain cut-off current IDSS VDS=100V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 4.5 Gat cutoff voltage Forward transfer admittance Drain to source on-state resistance Typ Max Unit 10 A 10 2.0 2.5 V Yfs VDS=10V,ID=8A RDS(on)1 VGS=10V,ID=8A 100 125 m RDS(on)2 VGS=4.5V,ID=8A 110 148 m Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance 9.5 A S 900 pF 110 pF Crss 50 pF Turn-on delay time ton 9.0 ns Rise time tr 5.0 ns Turn-off delay time toff 30 ns Fall time Total Gate Charge ID=8A,VGS(on)=10V,RG=0 ,VDD=50V tf 4.0 ns QG 20 nC 3.0 nC 5.0 nC Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com VDS=10V,VGS=0,f=1MHZ ID =16A, VDD =80V, VGS = 10 V [email protected] 4008-318-123 1 of 1