Transistors IC SMD Type Product specification 2SK3899 +0.1 1.27-0.1 TO-263 Features Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 5.60 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 RDS(on)2 = 6.5 mÙ MAX. (VGS = 4.5 V, ID = 42 A) Low C iss: C iss = 5500 pF TYP. +0.2 2.54-0.2 +0.2 15.25-0.2 RDS(on)1 = 5.3mÙ MAX. (VGS = 10 V, ID = 42 A) +0.1 0.81-0.1 2.54 +0.2 2.54-0.2 +0.2 8.7-0.2 Low On-state resistance 5.08 1 Gate +0.2 0.4-0.2 +0.1 -0.1 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Drain to source voltage Parameter VDSS 60 V Gate to source voltage VGSS Drain current Power dissipation TA=25 20 V ID 84 A Idp * 336 A 1.5 PD Channel temperature Tch 150 Storage temperature Tstg -55 to +150 * PW W 146 TC=25 10 s,Duty Cycle 1% Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max IDSS VDS=60V,VGS=0 Gate leakage current IGSS VGS= 20V,VDS=0 VGS(off) VDS=10V,ID=1mA 1.5 2.0 Yfs VDS=10V,ID=42A 35 70 RDS(on)1 VGS=10V,ID=42A 4.2 5.3 mÙ RDS(on)2 VGS=4.5V,ID=42A 4.9 6.5 mÙ Gate cut off voltage Forward transfer admittance Drain to source on-state resistance 2.5 A V S pF 1050 pF Crss 350 pF ton 19 ns 13 ns Ciss Coss Reverse transfer capacitance Turn-on delay time Rise time tr Turn-off delay time toff Fall time tf QG Gate to Source Charge QGS Gate to Drain Charge QGD http://www.twtysemi.com 10 A 5500 Input capacitance Output capacitance Total Gate Charge 10 Unit Drain cut-off current VDS=10V,VGS=0,f=1MHZ ID=42A,VGS(on)=10V,RG=0 ,VDD=30V VDD = 48V VGS = 10 V ID =84A [email protected] 91 ns 10 ns 96 nC 18 nC 23.5 nC 4008-318-123 1 of 1