Transistors Diodes SMD Type Product specification BCV62 ■ Features Unit: mm ● High current gain ● Low collector-emitter saturation voltage 1 2 1 TR2 TR1 3 4 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter voltage VCEO -30 V Emitter-base voltage VEBO -6 V IC -100 mA Collector current Power dissipation Thermal resistance from junction to ambient Operating and Storage and Temperature Range http://www.twtysemi.com PD 250 mW RθJA 500 ℃/W Tj, TSTG -55 to +150 ℃ [email protected] 4008-318-123 1 of 3 Transistors MOSFET Diodes SMD Type Product specification BCV62 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Transistor TR1 Collector-Base Breakdown Voltage V(BR)CBO IC = -10 μA, IE = 0 -30 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = -10 mA, IB = 0 -30 V Emitter-Base Breakdown Voltage V(BR)EBO -6 V IC = -10 μA, IC = 0 Collector cutoff current ICBO VCB=-30V, IE=0 -15 nA Emitter cutoff current IEBO VEB=-5V, IC=0 -100 nA DC current gain hFE collector-emitter saturation voltage * VCE(sat) VCE=-5V, IC= -100μA 100 VCE=-5V, IC=-2mA 100 800 IC = -10 mA; IB = -0.5 mA IC = -100 mA; IB = -5 mA base-emitter saturation voltage * VBE(sat) V -0.65 V IC = -10 mA; IB = -0.5 mA -0.7 V IC = -100 mA; IB = -5 mA -0.85 V 4.5 pF Collector capacitance Cc IE = ie = 0; VCB = -10 V; f = 1 MHz Transition frequency fT IC = -10 mA; VCE = -5 V; f = 100 MHz F IC =-200μA; VCE =-5 V; RS =2kΩ; f = 1 kHz; B = 200 Hz Noise figure -0.3 100 MHz 10 dB Transistor TR2 Base-emitter forward voltage VEBS VCB = 0; IE = 250 mA VCB = 0; IE = 10μA 1.5 0.4 V mV DC current gain BCV62A hFE BCV62B IC = -2 mA; VCE = -5 V BCV62C 125 250 220 475 420 800 * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking TYPE BCV61 BCV61A BCV61B BCV61C Marking 3MP 3JP 3KP 3LP http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Transistors Diodes SMD Type Product specification BCV62 ■ Typical Characteristics −30 handbook, full pagewidth −VCE1max IE2 = (V) 1 mA −20 5 mA 10 mA −10 50 mA 0 10−1 1 10 RE (Ω) 102 I C1 -------- = 1.3 (see Fig.3). I E2 Fig.1 Maximum collector-emitter voltage as a function of emitter resistance. http://www.twtysemi.com [email protected] 4008-318-123 3 of 3