Product specification MMBT2222 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 ● Complementary PNP type available(MMBT2907) 1 0.55 ● Epitaxial planar die construction. +0.1 1.3-0.1 +0.1 2.4-0.1 ■ Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO 60 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 5 V Collector current IC 600 mA Power dissipation PD 250 mW RθJA 500 ℃/W Tj, TSTG -55 to +150 ℃ Thermal resistance from junction to ambient Operating and Storage and Temperature Range ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 10 μA, IE = 0 75 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 40 V V(BR)EBO 6 V Emitter-Base Breakdown Voltage IC = 10 μA, IC = 0 Collector cutoff current ICBO VCB=50V, IE=0 Emitter cutoff current IEBO VEB= 3V, IC=0 DC current gain hFE collector-emitter saturation voltage * base-emitter saturation voltage * VCE(sat) VBE(sat) VCE=10V, IC= 0.1mA 35 VCE=10V, IC= 150mA 100 VCE=10V, IC= 500mA 30 V 10 nA 100 nA 300 IC = 150 mA; IB = 15 mA 0.4 V IC = 500 mA; IB = 50 mA 1.6 V IC = 150 mA; IB = 15 mA 1.3 V 2.6 IC = 500 mA; IB = 50 mA Transition frequency fT IC = 20 mA; VCE = 20 V; f = 100 MHz Delay time Rise time td tr VCC=30V, VBE(off)=-0.5V, IC=150mA , IB1= 15mA Storage time ts Fall time tf 250 10 25 VCC=30V, IC=150mA,IB1=-IB2=15mA V MHz ns ns 225 ns 60 ns * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking Marking M1B http://www.twtysemi.com [email protected] 4008-318-123 1 of 1