TYSEMI FML10

Transistors
Diodes
IC
SMD Type
Product specification
FML10
■ Features
Unit: mm
● Tr1: Low VCE(sat)
● Di : Low VF
4
5
● Small package
(3)
(2)
(1)
1
Di2
(4)
2
3
Tr1
(5)
■ Absolute Maximum Ratings Ta = 25℃
Tr1
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
15
V
Collector-emitter voltage
VCEO
12
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
1.5
A
Power dissipation
PD
200
mW
Tj, TSTG
-40 to +125
℃
Symbol
Rating
Unit
Reak reverse voltage
VRM
25
V
Reverse voltage (DC)
VR
20
V
Average rectified forward current
IF
700
mA
IFSM
3
A
Tj, TSTG
-40 to +125
℃
Operating and Storage and Temperature Range
Di2
Parameter
Forward current surge peak (60HZ, 1∞)
Operating and Storage and Temperature Range
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Transistors
Diodes
IC
SMD Type
Product specification
FML10
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Typ
Max
Unit
Transistor TR1
Collector-Base Breakdown Voltage
V(BR)CBO IC = 10 μA, IE = 0
15
V
Collector-Emitter Breakdown Voltage
V(BR)CEO IC = 1 mA, IB = 0
12
V
Emitter-Base Breakdown Voltage
V(BR)EBO
6
IC = 10 μA, IC = 0
V
Collector cutoff current
ICBO
VCB=15V, IE=0
100
nA
Emitter cutoff current
IEBO
VEB=6V, IC=0
100
nA
DC current gain
hFE
VCE=2V, IC= 200mA
collector-emitter saturation voltage *
Transition frequency
VCE(sat)
fT
270
680
0.2
IC = 500 mA; IB = 25 mA
IC = 200 mA; VCE = 2 V; f = 100 MHz
400
Cob
VCB=10V, IE=0A, f=1MHz
12
Forward voltage
VF
Reverse current
IR
IF=700mA
VR=20V
Collector output capacitance
V
MHz
pF
Di2
490
mV
200
μA
* pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
■ Marking
Marking
L10
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Transistors
Diodes
IC
SMD Type
Product specification
FML10
■ Typical Characteristics
BASE SATURATION VOLTAGE : VBE (sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1000
Ta= −40°C
100
VCE=2V
Pulsed
10
0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C
Ta= −40°C
0.01
0.001
0
0.5
1.0
Ta=100°C
0.1
Ta=25°C
Ta= −40°C
VCE(sat)
0.01
0.001
0.001
0.01
1
10
COLLECTOR CURRENT : IC (A)
Ta=25°C
VCE=2V
0.1
IC/IB=50/1
0.01
IC/IB=10/1
0.001
0.001
100
VCE=2V
Ta=25°C
Pulsed
−0.01
−0.1
−1
1
0.1
1
100
EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
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10
0.01
0.1
1
Fig.6 Switching time
Di2
1000m
REVERSE CURRENT : IR (A)
100m
1
C
5°
2
=1
10m
Ta
=
−2
Ta
5°C
100m
Ta
=2
FORWARD CURRENT : IF (A)
10
tdon
COLLECTOR CURRENT : IC (A)
10
10
10
tf
1
0.001
−10
Di2
Cob
1
tr
100
Fig.5 Gain bandwidth product
vs. emitter current
IE=0A
f=1MHz
Ta=25°C
Cib
0.1
Fig.3 Collector-emitter saturation voltage
vs. collector current
EMITTER CURRENT : IE (A)
Fig.4 Grounded emitter propagation
characteristics
100
0.01
COLLECTOR CURRENT : IC (A)
IC=20 IB1=-20IB2
Ta=25°C
tstg f=100MHz
10
−0.001
1.5
IC/IB=20/1
1000
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER INPUT CAPACITANCE : Cib (pF)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
0.1
C
COLLECTOR CURRENT : IC (A)
1
Ta=100°C
VBE(sat)
1
1000
VCE=2V
Pulsed
0.1
1
=20/1
IC/IB=20
Pulsed
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
Fig.1 DC current gain
vs. collector current
10
Ta= −40°C
Ta=25°C
Ta=100°C
SWITCHING TIME : (ns)
Ta=25°C
10
5°
DC CURRENT GAIN : hFE
Ta=100°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Tr1
1m
Ta=125°C
10m
1m
100µ
Ta=25°C
10µ
Ta= −25°C
1µ
0.1µ
0.1m
0
0.1
0.2
0.3
0.4
0.5
FORWARD VOLTAGE : VF (V)
Fig.8 Forward characteristics
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0.6
0
10
20
30
40
50
60
70
REVERSE VOLTAGE : VR (V)
Fig.9 Reverse characteristics
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