Transistors Diodes IC SMD Type Product specification FML10 ■ Features Unit: mm ● Tr1: Low VCE(sat) ● Di : Low VF 4 5 ● Small package (3) (2) (1) 1 Di2 (4) 2 3 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Tr1 Symbol Rating Unit Collector-base voltage Parameter VCBO 15 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 6 V Collector current IC 1.5 A Power dissipation PD 200 mW Tj, TSTG -40 to +125 ℃ Symbol Rating Unit Reak reverse voltage VRM 25 V Reverse voltage (DC) VR 20 V Average rectified forward current IF 700 mA IFSM 3 A Tj, TSTG -40 to +125 ℃ Operating and Storage and Temperature Range Di2 Parameter Forward current surge peak (60HZ, 1∞) Operating and Storage and Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 3 Transistors Diodes IC SMD Type Product specification FML10 ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Transistor TR1 Collector-Base Breakdown Voltage V(BR)CBO IC = 10 μA, IE = 0 15 V Collector-Emitter Breakdown Voltage V(BR)CEO IC = 1 mA, IB = 0 12 V Emitter-Base Breakdown Voltage V(BR)EBO 6 IC = 10 μA, IC = 0 V Collector cutoff current ICBO VCB=15V, IE=0 100 nA Emitter cutoff current IEBO VEB=6V, IC=0 100 nA DC current gain hFE VCE=2V, IC= 200mA collector-emitter saturation voltage * Transition frequency VCE(sat) fT 270 680 0.2 IC = 500 mA; IB = 25 mA IC = 200 mA; VCE = 2 V; f = 100 MHz 400 Cob VCB=10V, IE=0A, f=1MHz 12 Forward voltage VF Reverse current IR IF=700mA VR=20V Collector output capacitance V MHz pF Di2 490 mV 200 μA * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking Marking L10 http://www.twtysemi.com [email protected] 4008-318-123 2 of 3 Transistors Diodes IC SMD Type Product specification FML10 ■ Typical Characteristics BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 Ta= −40°C 100 VCE=2V Pulsed 10 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) TRANSITION FREQUENCY : fT (MHz) Ta=25°C Ta= −40°C 0.01 0.001 0 0.5 1.0 Ta=100°C 0.1 Ta=25°C Ta= −40°C VCE(sat) 0.01 0.001 0.001 0.01 1 10 COLLECTOR CURRENT : IC (A) Ta=25°C VCE=2V 0.1 IC/IB=50/1 0.01 IC/IB=10/1 0.001 0.001 100 VCE=2V Ta=25°C Pulsed −0.01 −0.1 −1 1 0.1 1 100 EMITTER TO BASE VOLTAGE : VEB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage http://www.twtysemi.com 10 0.01 0.1 1 Fig.6 Switching time Di2 1000m REVERSE CURRENT : IR (A) 100m 1 C 5° 2 =1 10m Ta = −2 Ta 5°C 100m Ta =2 FORWARD CURRENT : IF (A) 10 tdon COLLECTOR CURRENT : IC (A) 10 10 10 tf 1 0.001 −10 Di2 Cob 1 tr 100 Fig.5 Gain bandwidth product vs. emitter current IE=0A f=1MHz Ta=25°C Cib 0.1 Fig.3 Collector-emitter saturation voltage vs. collector current EMITTER CURRENT : IE (A) Fig.4 Grounded emitter propagation characteristics 100 0.01 COLLECTOR CURRENT : IC (A) IC=20 IB1=-20IB2 Ta=25°C tstg f=100MHz 10 −0.001 1.5 IC/IB=20/1 1000 BASE TO EMITTER VOLTAGE : VBE (V) EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 0.1 C COLLECTOR CURRENT : IC (A) 1 Ta=100°C VBE(sat) 1 1000 VCE=2V Pulsed 0.1 1 =20/1 IC/IB=20 Pulsed Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current Fig.1 DC current gain vs. collector current 10 Ta= −40°C Ta=25°C Ta=100°C SWITCHING TIME : (ns) Ta=25°C 10 5° DC CURRENT GAIN : hFE Ta=100°C COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Tr1 1m Ta=125°C 10m 1m 100µ Ta=25°C 10µ Ta= −25°C 1µ 0.1µ 0.1m 0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE : VF (V) Fig.8 Forward characteristics [email protected] 0.6 0 10 20 30 40 50 60 70 REVERSE VOLTAGE : VR (V) Fig.9 Reverse characteristics 4008-318-123 3 of 3