Product specification MMBT2222AT SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 -0.1 1.0 +0.05 0.2-0.05 1 +0.15 1.6-0.15 +0.05 0.8-0.05 2 ● Ultra-Small Surface Mount Package +0.01 0.1-0.01 0.55 ■ Features ● Complementary PNP type available(MMBT2907AT) 0.35 3 +0.25 0.3-0.05 +0.1 0.5-0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector-base voltage VCBO 75 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 600 mA Power dissipation PD 150 mW RθJA 833 ℃/W Tj, TSTG -55 to +150 ℃ Thermal resistance from junction to ambient Operating and Storage and Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Product specification MMBT2222AT ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage V(BR)CBO IC = 10 μA, IE = 0 75 Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 mA, IB = 0 40 V V(BR)EBO 6 V Emitter-Base Breakdown Voltage Collector cutoff current ICBO IC = 10 μA, IC = 0 VCB=60V, IE=0 V 10 nA Collector cut-off current ICEX VCE=30V,VBE(off)=3V 10 nA Emitter cutoff current IEBO VEB= 3V, IC=0 100 nA DC current gain hFE collector-emitter saturation voltage * base-emitter saturation voltage * VCE(sat) VBE(sat) VCE=10V, IC= 0.1mA 40 VCE=10V, IC= 150mA 100 VCE=10V, IC= 500mA 42 300 IC = 150 mA; IB = 15 mA 0.3 V IC = 500 mA; IB = 50 mA 1 V 1.2 V 2 V IC = 150 mA; IB = 15 mA 0.6 IC = 500 mA; IB = 50 mA Transition frequency fT IC = 20 mA; VCE = 20 V; f = 100 MHz Delay time Rise time td tr VCC=30V, VBE(off)=-0.5V, IC=150mA , IB1= 15mA Storage time ts Fall time tf 300 VCC=30V, IC=150mA,IB1=-IB2=15mA MHz 10 25 ns ns 225 ns 60 ns * pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. ■ Marking Marking 1P http://www.twtysemi.com [email protected] 4008-318-123 2 of 2