Transistors IC SMD Type Product specification BCX71G SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 PNP Epitaxial Silicon Transistor 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 1.Base 2.Emitter +0.1 0.38-0.1 0-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -45 V Collector-emitter voltage VCEO -45 V Emitter-base voltage VEBO -5 V IC -100 mA PC 350 mW TSTG 150 Collector current Collector Power Dissipation Storage Temperature Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-Emitter Breakdown Voltage BVCEO IC= -2mA, IB=0 -45 V Emitter-Base Breakdown Voltage BVEBO IE= -1ìA, IC=0 -5 V Collector Cut-off Current ICES DC Current Gain hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage VCE (sat) VBE (sat) VBE (on) VCE= -32V, VBE=0 -20 VCE= -5V, IC= -2mA 120 VCE= -1V, IC= -50ìA 60 nA 220 IC= -10mA, IB= -0.25mA -0.25 V IC= -50mA, IB= -1.25mA -0.55 V IC= -10mA, IB= -0.25mA -0.6 -0.85 V IC= -50mA, IB= -1.25mA -0.68 -1.05 V VCE= -5V, IC= -2mA -0.6 -0.75 V Output Capactance Cob VCB= -10V, IE=0, f=1MHz Noise Figure NF IC=0.2mA, VCE=5V,f=1KHz, RS=2KÙ Turn On Time tON IC= -10mA, IB1= -1mA 150 ns Turn Off Time tOFF IB2= -1mA, VBB=3.6V,RL=990Ù 800 ns pF 6 dB Marking Marking BG http://www.twtysemi.com [email protected] 4008-318-123 1 of 1