TYSEMI KSA1201

Transistors
Transistor
T
SMD Type
Product specification
KSA1201
Features
Collector-Emitter Voltage: VCEO= -120V
fT=120MHz
Collector Power Dissipation PC=1 to 2W : Mounted on Ceramic Board
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
-120
V
Collector-Emitter Voltage
VCEO
-120
V
Emitter-Base Voltage
VEBO
-5
V
IC
-800
mA
Collector Current
Base Current
Collector Power Dissipation
IB
-160
mA
PC
500
mW
PC*
1,000
mW
Junction Temperature
TJ
150
Storage Temperature
TSTG
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-Emitter Breakdown Voltage
BVCEO
IC= -10mA, IB=0
120
V
Emitter-Base Breakdown Voltage
BVEBO
IE= -1mA, IC=0
-5
V
Collector Cut-off Current
ICBO
VCB= -120V, IE=0
-100
nA
Emitter Cut-off Current
IEBO
VBE= -5V, IC=0
-100
nA
DC Current Gain
hFE
VCE= -5V, IC= -100mA
Collector-Emitter Saturation Voltage
VCE (sat)
IC= -500mA, IB=-50mA
-1.0
V
Base-Emitter On Voltage
VBE (on)
VCE= -5V, IC= -500mA
-1.0
V
fT
VCE= -5V, IC= -100mA
Current Gain Bandwidth Product
Output Capacitance
Cob
80
240
120
VCB= -10V, IE=0, f=1MHz
MHz
30
pF
hFE Classification
Marking
SDO
SDY
Rank
O
Y
Type
80 160
120 240
http://www.twtysemi.com
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4008-318-123
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