SMD Type DISCRETE DISCRETE SEMICONDUCTORS SEMICONDUCTORS Product specification BZV55 series DATA SHEET 1/3 page (Datasheet) M3D054 Voltage regulator diodes http://www.twtysemi.com [email protected] 4008-318-123 1 of 7 SMD Type Product specification Voltage regulator diodes BZV55 series FEATURES • Total power dissipation: max. 500 mW • Two tolerance series: ±2%, and approx. ±5% • Working voltage range: nom. 2.4 to 75 V (E24 range) • Non-repetitive peak reverse power dissipation: max. 40 W. k columns a APPLICATIONS • Low voltage stabilizers or voltage references. MAM215 DESCRIPTION Low-power voltage regulator diodes in small hermetically sealed glass SOD80C SMD packages. The diodes are available in the normalized E24 ±2% (BZV55-B) and approx. ±5% (BZV55-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V. The cathode is indicated by a yellow band. Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. − MAX. UNIT IF continuous forward current IZSM non-repetitive peak reverse current tp = 100 µs; square wave; Tj = 25 °C prior to surge see Tables 1 and 2 A Ptot total power dissipation Tamb ≤ 50 °C; note 1 − 400 mW tie-point ≤ 50 °C; note 1 − 500 mW 40 W tp = 100 µs; square wave; − Tj = 25 °C prior to surge; see Fig.3 250 mA PZSM non-repetitive peak reverse power dissipation Tstg storage temperature −65 +200 °C Tj junction temperature −65 +200 °C Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. http://www.twtysemi.com [email protected] 4008-318-123 2 of 7 SMD Type Product specification Voltage regulator diodes BZV55 series ELECTRICAL CHARACTERISTICS Total BZV55-B and BZV55-C series Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER MAX. UNIT IF = 10 mA; see Fig.4 0.9 V BZV55-B/C2V4 VR = 1 V 50 µA BZV55-B/C2V7 VR = 1 V 20 µA BZV55-B/C3V0 VR = 1 V 10 µA BZV55-B/C3V3 VR = 1 V 5 µA BZV55-B/C3V6 VR = 1 V 5 µA BZV55-B/C3V9 VR = 1 V 3 µA BZV55-B/C4V3 VR = 1 V 3 µA BZV55-B/C4V7 VR = 2 V 3 µA BZV55-B/C5V1 VR = 2 V 2 µA BZV55-B/C5V6 VR = 2 V 1 µA BZV55-B/C6V2 VR = 4 V 3 µA BZV55-B/C6V8 VR = 4 V 2 µA BZV55-B/C7V5 VR = 5 V 1 µA BZV55-B/C8V2 VR = 5 V 700 nA BZV55-B/C9V1 VR = 6 V 500 nA BZV55-B/C10 VR = 7 V 200 nA BZV55-B/C11 VR = 8 V 100 nA BZV55-B/C12 VR = 8 V 100 nA BZV55-B/C13 VR = 8 V 100 nA BZV55-B/C15 to BZV55-B/C75 VR = 0.7VZnom 50 nA VF forward voltage IR reverse current http://www.twtysemi.com CONDITIONS [email protected] 4008-318-123 3 of 7 SMD Type This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This textspecification is here in Product white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here inThis text is here in BZV55 series Voltage regulator diodes Table 1 Per type, BZV55-B/C2V4 to BZV55-B/C24 Tj = 25 °C unless otherwise specified. BZV55Bxxx Cxxx 2V4 WORKING VOLTAGE VZ (V) at IZtest = 5 mA DIFFERENTIAL RESISTANCE rdif (Ω) Tol. ±2% (B) Tol. approx. ±5% (C) at IZtest = 1 mA MIN. MIN. TYP. 2.35 MAX. 2.45 2.2 MAX. 2.6 275 MAX. 600 TEMP. COEFF. SZ (mV/K) at IZtest = 5 mA (see Figs 5 and 6) NON-REPETITIVE PEAK DIODE CAP. REVERSE CURRENT Cd (pF) at f = 1 MHz; IZSM (A) VR = 0 V at tp = 100 µs; Tamb = 25 °C at IZtest = 5 mA TYP. 70 MAX. 100 MIN. −3.5 TYP. −1.6 MAX. 0 MAX. 450 MAX. 6.0 2V7 2.65 2.75 2.5 2.9 300 600 75 100 −3.5 −2.0 0 450 6.0 3V0 2.94 3.06 2.8 3.2 325 600 80 95 −3.5 −2.1 0 450 6.0 3V3 3.23 3.37 3.1 3.5 350 600 85 95 −3.5 −2.4 0 450 6.0 3V6 3.53 3.67 3.4 3.8 375 600 85 90 −3.5 −2.4 0 450 6.0 3V9 3.82 3.98 3.7 4.1 400 600 85 90 −3.5 −2.5 0 450 6.0 4V3 4.21 4.39 4.0 4.6 410 600 80 90 −3.5 −2.5 0 450 6.0 4V7 4.61 4.79 4.4 5.0 425 500 50 80 −3.5 −1.4 0.2 300 6.0 5V1 5.00 5.20 4.8 5.4 400 480 40 60 −2.7 −0.8 1.2 300 6.0 5V6 5.49 5.71 5.2 6.0 80 400 15 40 −2.0 1.2 2.5 300 6.0 6V2 6.08 6.32 5.8 6.6 40 150 6 10 0.4 2.3 3.7 200 6.0 6V8 6.66 6.94 6.4 7.2 30 80 6 15 1.2 3.0 4.5 200 6.0 7V5 7.35 7.65 7.0 7.9 30 80 6 15 2.5 4.0 5.3 150 4.0 8V2 8.04 8.36 7.7 8.7 40 80 6 15 3.2 4.6 6.2 150 4.0 9V1 8.92 9.28 8.5 9.6 40 100 6 15 3.8 5.5 7.0 150 3.0 10 9.80 10.20 9.4 10.6 50 150 8 20 4.5 6.4 8.0 90 3.0 11 10.80 11.20 10.4 11.6 50 150 10 20 5.4 7.4 9.0 85 2.5 12 11.80 12.20 11.4 12.7 50 150 10 25 6.0 8.4 10.0 85 2.5 13 12.70 13.30 12.4 14.1 50 170 10 30 7.0 9.4 11.0 80 2.5 15 14.70 15.30 13.8 15.6 50 200 10 30 9.2 11.4 13.0 75 2.0 16 15.70 16.30 15.3 17.1 50 200 10 40 10.4 12.4 14.0 75 1.5 18 17.60 18.40 16.8 19.1 50 225 10 45 12.4 14.4 16.0 70 1.5 20 19.60 20.40 18.8 21.2 60 225 15 55 12.3 15.6 18.0 60 1.5 22 21.60 22.40 20.8 23.3 60 250 20 55 14.1 17.6 20.0 60 1.25 24 23.50 24.50 22.8 25.6 60 250 25 70 15.9 19.6 22.0 55 1.25 http://www.twtysemi.com [email protected] 4008-318-123 4 of 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader.This text is here in Product specification BZV55 series Voltage regulator diodes white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader. white to force landscape pages to be ... Table 2 Per type, BZV55-B/C27 to BZV55-B/C75 Tj = 25 °C unless otherwise specified. BZV55Bxxx Cxxx DIFFERENTIAL RESISTANCE rdif (Ω) WORKING VOLTAGE VZ (V) at IZtest = 2 mA TEMP. COEFF. SZ (mV/K) at IZtest = 2 mA (see Figs 5 and 6) NON-REPETITIVE PEAK DIODE CAP. REVERSE CURRENT Cd (pF) at f = 1 MHz; IZSM (A) VR = 0 V at tp = 100 µs; Tamb = 25 °C Tol. ±2% (B) Tol. approx. ±5% (C) MIN. MAX. MIN. 27 26.50 27.50 25.1 28.9 65 300 25 80 18.0 22.7 25.3 50 1.0 30 29.40 30.60 28.0 32.0 70 300 30 80 20.6 25.7 29.4 50 1.0 33 32.30 33.70 31.0 35.0 75 325 35 80 23.3 28.7 33.4 45 0.9 36 35.30 36.70 34.0 38.0 80 350 35 90 26.0 31.8 37.4 45 0.8 39 38.20 39.80 37.0 41.0 80 350 40 130 28.7 34.8 41.2 45 0.7 43 42.10 43.90 40.0 46.0 85 375 45 150 31.4 38.8 46.6 40 0.6 47 46.10 47.90 44.0 50.0 85 375 50 170 35.0 42.9 51.8 40 0.5 51 50.00 52.00 48.0 54.0 90 400 60 180 38.6 46.9 57.2 40 0.4 56 54.90 57.10 52.0 60.0 100 425 70 200 42.2 52.0 63.8 40 0.3 62 60.80 63.20 58.0 66.0 120 450 80 215 58.8 64.4 71.6 35 0.3 68 66.60 69.40 64.0 72.0 150 475 90 240 65.6 71.7 79.8 35 0.25 75 73.50 76.50 70.0 79.0 170 500 95 255 73.4 80.2 88.6 35 0.2 http://www.twtysemi.com MAX. at IZtest = 0.5 mA at IZtest = 2 mA TYP. MAX. [email protected] TYP. MAX. MIN. TYP. MAX. 4008-318-123 MAX. MAX. 5 of 7 This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader This text is here in white to force landscape pages to be rotated correctly when browsing through the pdf in the Acrobat reader Product specification BZV55 series Voltage regulator diodes THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient see Fig.2 and note 1 380 K/W Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. GRAPHICAL DATA MBG930 103 handbook, full pagewidth δ=1 Rth j-a 0.75 0.50 0.33 0.20 (K/W) 102 0.10 0.05 0.02 0.01 ≤0.001 10 tp T 1 10−1 1 10 102 103 104 δ= tp T tp (ms) 105 Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. http://www.twtysemi.com [email protected] 4008-318-123 6 of 7 Product specification BZV55 series Voltage regulator diodes MBG781 MBG801 103 handbook, halfpage 300 handbook, halfpage PZSM (W) IF (mA) 102 200 (1) 10 100 (2) 1 10−1 1 duration (ms) 0 0.6 10 (1) Tj = 25 °C (prior to surge). (2) Tj = 150 °C (prior to surge). Tj = 25 °C. Fig.3 Fig.4 Maximum permissible non-repetitive peak reverse power dissipation versus duration. 0.8 VF (V) Typical forward current as a function of forward voltage. MBG783 0 1.0 MBG782 10 handbook, halfpage handbook, halfpage 12 SZ (mV/K) SZ (mV/K) 4V3 11 10 −1 9V1 5 3V9 8V2 7V5 6V8 3V6 −2 6V2 5V6 5V1 0 3V3 4V7 3V0 2V4 2V7 −3 0 20 40 IZ (mA) 60 −5 0 4 8 BZV55-B/C2V4 to BZV55-B/C4V3. Tj = 25 to 150 °C. BZV55-B/C4V7 to BZV55-B/C12. Tj = 25 to 150 °C. Fig.5 Fig.6 Temperature coefficient as a function of working current; typical values. http://www.twtysemi.com [email protected] 12 16 IZ (mA) 20 Temperature coefficient as a function of working current; typical values. 4008-318-123 7 of 7