TYSEMI FCX458

Transistors
SMD Type
Product specification
FCX458
Features
400 Volt VCEO
Ptot= 1 Watt
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-Base Voltage
VCBO
400
V
Collector-Emitter Voltage
VCEO
400
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
300
mA
Peak Pulse Current
ICM
1
A
IB
200
mA
Ptot
2
W
Tj:Tstg
-55 to +150
Base Current
Power Dissipation at Tamb=25
Operating and Storage Temperature Range
http://www.twtysemi.com
[email protected]
4008-318-123
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Transistors
SMD Type
Product specification
FCX458
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Max
Unit
Breakdown Voltages
V(BR)CBO
IC=100ìA
400
V
Breakdown Voltages
VCEO(sus)
IC=10mA*
400
V
Breakdown Voltages
V(BR)EBO
IE=100ìA
5
V
Collector Cut-Off Currents
ICBO
VCB=320V
Collector Cut-Off Currents
ICES
VCE=320V
100
nA
Emitter Cut-Off Current
IEBO
VEB=4V
100
nA
IC=20mA, IB=2mA*
0.2
V
Emitter Saturation Voltages
Base-Emitter Turn On Voltage
Static Forward Current Transfer Ratio
Transition Frequency
VCE(sat)
IC=50mA, IB=6mA*
0.5
V
IC=50mA, IB=5mA*
0.9
V
VBE(on)
IC=50mA, VCE=10V*
0.9
V
IC=1mA, VCE=10V
100
hFE
IC=50mA, VCE=10V*
100
IC=100mA, VCE=10V*
15
IC=10mA, VCE=20V,f=20MHz
50
Cobo
ton
Switching times
nA
VBE(sat)
fT
Collector-Base Breakdown Voltage
100
toff
VCB=20V, f=1MHz
300
MHz
5
pF
IC=50mA, VCC=100V
135 Typical
ns
IB1=5mA, IB2=-10mA
2260 Typical
ns
* Measured under pulsed conditions. Pulse width=300ìs. Duty cycle
2%
Marking
Marking
N58
http://www.twtysemi.com
[email protected]
4008-318-123
2of 2