Transistors SMD Type Product specification FCX458 Features 400 Volt VCEO Ptot= 1 Watt Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 400 V Emitter-Base Voltage VEBO 5 V Continuous Collector Current IC 300 mA Peak Pulse Current ICM 1 A IB 200 mA Ptot 2 W Tj:Tstg -55 to +150 Base Current Power Dissipation at Tamb=25 Operating and Storage Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1of 2 Transistors SMD Type Product specification FCX458 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Max Unit Breakdown Voltages V(BR)CBO IC=100ìA 400 V Breakdown Voltages VCEO(sus) IC=10mA* 400 V Breakdown Voltages V(BR)EBO IE=100ìA 5 V Collector Cut-Off Currents ICBO VCB=320V Collector Cut-Off Currents ICES VCE=320V 100 nA Emitter Cut-Off Current IEBO VEB=4V 100 nA IC=20mA, IB=2mA* 0.2 V Emitter Saturation Voltages Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio Transition Frequency VCE(sat) IC=50mA, IB=6mA* 0.5 V IC=50mA, IB=5mA* 0.9 V VBE(on) IC=50mA, VCE=10V* 0.9 V IC=1mA, VCE=10V 100 hFE IC=50mA, VCE=10V* 100 IC=100mA, VCE=10V* 15 IC=10mA, VCE=20V,f=20MHz 50 Cobo ton Switching times nA VBE(sat) fT Collector-Base Breakdown Voltage 100 toff VCB=20V, f=1MHz 300 MHz 5 pF IC=50mA, VCC=100V 135 Typical ns IB1=5mA, IB2=-10mA 2260 Typical ns * Measured under pulsed conditions. Pulse width=300ìs. Duty cycle 2% Marking Marking N58 http://www.twtysemi.com [email protected] 4008-318-123 2of 2