Transistors IC ransistor SMD Type Product specification FMMT718 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 IC CONT 2.5A. 0.4 3 625mW power dissipation. 1 0.55 IC up to 10A peak pulse current. 2 Excellent hfe characteristics up to 10A (pulsed). +0.1 0.95-0.1 +0.1 1.9-0.1 Extremely low saturation voltage e.g. 10mV typ.. +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 Exhibits extremely low equivalent on-resistance; RCE(sat) . 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -20 V Collector-emitter voltage VCEO -20 V Emitter-base voltage VEBO -5 V Peak collector current ICM -6 A Collector current IC -1.5 A Base current Power dissipation Operating and storage temperature range http://www.twtysemi.com IB -500 mA Ptot 625 mW Tj,Tstg -55 to +150 [email protected] 4008-318-123 1 of 2 Transistors IC ransistor SMD Type Product specification FMMT718 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100ìA -20 -65 V Collector-emitter breakdown voltage * V(BR)CEO IC=-10mA -20 -55 V Emitter-base breakdown voltage V(BR)EBO IE=-100ìA -5 -8.8 Collector cutoff current ICBO Emitter cut-off current IEBO V VCB=-15V -100 nA VEB=-4V -100 nA Collector-emitter saturation voltage * IC=-0.1A, IB=-10mA VCE(sat) IC=-1A, IB=-10mA IC=-1.5A, IB=-50mA -16 -130 -145 -40 -200 -220 mV Base-emitter saturation voltage * VBE(sat) IC=-1.5A,IB=-50mA -0.87 -1 V Base-emitter voltage * VBE(ON) IC=-2A,VCE=-2V -0.81 -1 V DC current gain * hFE Current-gain-bandwidth product fT IC=-10mA, VCE=-2V IC=-0.1A, VCE=-2V IC=-2A, VCE=-2V IC=-4A, VCE=-2V IC=-6A, VCE=-2V IC=-50mA,VCE=-10V,f=100MHz 300 300 150 35 15 475 450 230 70 30 150 180 21 MHz 30 pF Output capacitance Cobo VCB=-10V,f=1MHz Turn-on time t(on) VCC=-10V, IC=-1A 40 ns Turn-off time t(off) IB1=-IB2=-20mA 670 ns * Pulse test: tp 300 ìs; d 0.02. Marking Marking 718 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2