IC Transistors MOSFET SMDType Type SMD Product specification FTD2019 TSSOP-8 ■ Features Unit: mm ● RDS(ON)=28mΩ Max. @VGS=4V ● RDS(ON)=35mΩ Max. @VGS=2.5V D1 D2 S1 S2 S1 S2 D1 G2 1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±10 V ID 5 A Drain-Current -Continuous -Pulsed Power Dissipation (NOTE 1) IDM 20 A (NOTE 2) PD 1.3 W RθJA 96 ℃/W Tj.Tstg -55 to 150 ℃ Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range Note: 1. PW≤10μs, duty cycle≤1% 2. Mounted on a ceramic board (1000mm2×0.8mm) http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC Transistors MOSFET SMDType Type SMD Product specification FTD2019 ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol Test conditions Min Typ Max VDSS VGS=0V,ID=1mA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA Gate-Body Leakage IGSS VGS=±8V,VDS=0V ±10 μA 1.3 V VGS=4V,ID=5A 28 mΩ VGS=2.5V,ID=2A 35 mΩ Cutoff Voltage VGS(off) VDS=10V, ID=1mA Drain- Source on-state Resistance RDS(ON) Input Capacitance Ciss 30 Unit V 0.4 1300 VDS = 10V, VGS = 0V,f =1.0MHZ pF Output Capacitance Coss 280 pF Reverse Transfer Capacitance Crss 160 pF Turn-On Delay Time tD(on) 18 ns Rise Time tr Turn-Off Delay Time tD(off) Fall Time VDD=15V,ID=5A,VGS=4V, RL=3Ω,RGEN=50Ω tf Total Gate Charge Qg Gate-S ource Charge Qgs Gate-Drain Charge Qgd Diode Forward Voltage VSD VDS = 10V, ID = 5A,VGS = 10V IS=5A, VGS=0 115 ns 130 ns 145 ns 50 nC 2.5 nC 5 nC 1.2 V ■ Marking Marking 2019 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2