TYSEMI KXU05N25

Transistors
IC
MOSFET
SMD Type
Product specification
KXU05N25
■ Features
TO-252
● VDS (V) = 250V
Unit: mm
2
1
2.3
3
+0.1
0.60-0.1
3.80
+0.8
0.50-0.7
+0.15
5.55-0.15
+0.1
0.80-0.1
+0.1
2.30-0.1
0.127
max
+0.25
2.65-0.1
+0.15
1.50-0.15
+0.15
0.50-0.15
+0.2
9.70-0.2
+0.15
6.50-0.15
+0.2
5.30-0.2
+0.28
1.50-0.1
● RDS(ON) ≤ 1Ω (VGS = 10V)
+0.15
4.60-0.15
1. Gate
2. Drain
3. Source
■ Absolute Maximum Ratings Ta = 25℃
Symbol
Rating
Unit
Drain-Source Voltage
Parameter
VDSS
250
V
Gate source voltage
VGS
±20
V
ID
5
A
IDM
15
A
50
W
Drain Current — Continuous
Drain Current - Pulsed
Power dissipation
(Note 2)
@ TA = 25℃
(Note 1)
PD
0.32
W/℃
RthJA
100
℃/W
Tj , Tstg
-55 to +150
℃
- Derate above 25℃
Thermal resistance, junction - ambient
Operating and storage temperature
Note:1.Power rating when mounted on FR-4 glass epoxy printed circuit board using recommended footprint.
2.Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
MOSFET
SMD Type
Product specification
KXU05N25
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test conditions
Min
Drain-Source Breakdown Voltage
BVDSS
VGS = 0 V, ID = 250 μA
250
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
Gate-Body leakage current
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS =250 V, VGS = 0 V
RDS(on)
VGS = 10 V, ID = 2.5 A
gFS
VDS = 15 V, ID = 2.5A
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Turn-On DelayTime
V
±100
nA
10
μA
1
Ω
S
15
nC
2.9
6.2
520
66
90
Crss
14
30
td(on)
9
10
tr
Turn-Off Delay Time
td(off)
VDS =25V ,VGS = 0 , f = 1.0MHz
VDD = 125V ,VGS=10V,RG = 9.1Ω ,
ID = 5A
tf
Drain-Source Diode Forward Voltage
4.0
2.6
13.2
VDS = 200V ,VGS = 10 V , ID=5 A
VSD
Reverse Recovery Time
trr
Maximum Body-Diode Continuous Current
IS
Unit
V
0.81
1.5
Max
369
Turn-On Rise Time
Turn-Off Fall Time
Typ
IS = 5 A,dIS / dt = 100 A/μs
18
40
21
40
18
40
0.93
1.6
147
pF
ns
V
ns
5
A
■ Marking
Marking
5N25
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2