IC IC MOSFET MOSFE SMD Type Product specification SI9926DY ■ Features SOP-8 ● RDS(on) ≤ 0.032 Ω @ VGS = 4.5 V ● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V. D1 G1 D2 G2 S1 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 6.5 A Pulsed Drain Current IDM 20 A Maximum Power Dissipation TA = 25℃ PD TA = 70℃ 2 W 1.3 W Thermal Resistance,Junction-to-Ambient RθJA 62.5 ℃/W Jumction temperature and Storage temperature Tj.Tstg -55 to +150 ℃ http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFE MOSFET SMD Type Product specification SI9926DY ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain-Source Breakdown Voltage VDSS VGS = 0 V, ID = 250 μA Zero Gate Voltage Drain Current IDSS VDS = 16V , VGS = 0V Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance * On-State Drain Current * Min Typ Max Unit 1 μA 1.5 V nA 20 VGS(th) VDS = VGS , ID = 250uA IGSS VDS = 0V , VGS = ±8V ±100 VGS = 4.5V , ID = 6.5A 0.026 0.032 VGS = 2.5V , ID = 5.4A 0.037 0.045 RDS(on) ID(on) Forward Transconductance * gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg 0.5 V VDS = 5V , VGS = 4.5V 1 15 VDS = 5V , ID =3A VDS = 10 V, VGS = 0 V,f = 1.0 MHz A 11 S 700 pF 175 pF 85 pF 7 VDS = 10V , VGS = 4.5V , ID = 3A 10 nC Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.9 Turn-On Delay Time td(on) 8 16 10 18 18 29 5 10 Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Maximum Continuous Drain-Source Diode Forward Current IS Diode Forward Voltage * VSD VDD = 10V ID = 1A , VGS = 4.5V , RG = 6Ω IS = 1.3A, VGS = 0 V Ω 1.2 0.65 ns 1.3 A 1.2 V * Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. http://www.twtysemi.com [email protected] 4008-318-123 2 of 2