IC IC MOSFET SMD Type Product specification SI4410DY SOP-8 ■ Features ● RDS(ON)≤0.0135Ω @VGS=10V D D D D S S S G ● RDS(ON)≤0.02Ω @VGS=4.5V ● Low gate charge. ● Fast switching speed. D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Drain-Source Voltage Parameter VDS 30 V Gate-Source Voltage VGS ±20 V Drain-Current -Continuous (NOTE 1) ID 10 A -Pulsed (NOTE 2) IDM 50 A (NOTE 1) PD 2.5 W RθJA 50 ℃/W Tj.Tstg -55 to 150 ℃ Power Dissipation Thermal Resistance,Junction- to-Ambient Operating Junction and Storage Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC MOSFET SMD Type Product specification SI4410DY ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test conditions Drain-Source Breakdown Voltage VDSS VGS=0V,ID=250uA Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V Gate-Body Leakage IGSS VGS=±20V,VDS=0V VGS(th) VGS=VDS,ID=250uA Gate Threshold Voltage (NOTE 2) Drain- Source on-state Resistance (NOTE 2) On-State Drain Current (NOTE 2) Forward Transconductance (NOTE 2) Input Capacitance RDS(ON) Min Typ Max Unit 1 μA ±100 nA 20 V 3 V VGS=10V,ID=10A 0.0135 Ω VGS=4.5V,ID=5A 0.02 Ω ID(ON) VDS=5V,VGS=10V gFS VDS=10V,ID=10A 1 20 Ciss A 27 S 1350 pF VDS = 15V, VGS = 0V,f =1.0MHZ Output Capacitance Coss 340 pF Reverse Transfer Capacitance Crss 125 pF Turn-On Delay Time tD(on) 30 ns Rise Time tr Turn-Off Delay Time tD(off) Fall Time VDD=25V,ID=1A,VGS=10V, RL=25Ω,RGEN=6Ω tf Total Gate Charge Qg Gate-S ource Charge Qgs Gate-Drain Charge Qgd Drain-Source Diode Forward Current (NOTE 2) Diode Forward Voltage 20 ns 100 ns 80 ns 22 VDS = 15V, ID = 10A,VGS = 10V VGS=0V,IS=2.3A nC nC 4 nC IS VSD 60 5 0.825 2.3 A 1.2 V Note: 1. Surface Mounted on FR4 Board 2. Pulse Test:Pulse Width≤300μs,Duty Cycle≤2% ■ Marking Marking 4410 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2