Transistors IC MOSFET SMD Type Product specification KI1304BDL Features TrenchFET Power MOSFET 100% Rg Tested 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit VDS 30 V Drain-source voltage Gate-source voltage 12 V ID 0.90 0.71 A ID 0.85*1,2 0.68*1,2 A VGS Continuous drain current (TJ = 150 ) -- Tc=25 Tc=70 Continuous drain current (TJ = 150 ) -- Ta=25 Ta=70 Pulsed drain current A IDM Continuous Source Drain Diode Current Tc=25 0.31 IS A 0.28 Ta=25 Power dissipation -- Tc=25 Tc=70 PD 0.37 0.24 W Power dissipation -- Ta=25 Ta=70 PD 0.34*1,2 0.22*1,2 W Tj,Tstg -55 to +150 Operating junction and storage temperature range *1 Surface Mounted on 1" X 1" FR4 Board. *2 t = 5 sec Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient*1,2 Maximum Junction-to-Foot (Drain) t 5 sec Steady State Symbol Typical Maximum RthJA 315 375 RthJF 285 340 Unit /W *1 Surface Mounted on 1" X 1" FR4 Board. *2 Maximum under steady state conditions is 360 http://www.twtysemi.com /W. [email protected] 4008-318-123 1 of 2 Transistors IC MOSFET SMD Type Product specification KI1304BDL Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage VDS VDS Temperature Coefficient VDS/TJ VGS(th) Temperature Coefficient VGS(th)/TJ Gate threshold voltage VGS(th) Gate-body leakage IGSS Zero gate voltage drain current IDSS On-state drain current ID(on) Drain-source on-state resistance rDS(on) Forward transconductance gfs Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total gate charge * Qg Total gate charge * Qg Gate-source charge * Qgs Gate-drain charge * Qgd Gate Resistance Rg Testconditons VGS = 0 V, ID = 250 A tr td(off) Turn-off time IS Pulse Diode Forward Current* ISM Body Diode Voltage VSD mv/ 0.6 1.3 100 12 V VDS =30 V, VGS = 0 V 1 VDS =30 V, VGS = 0 V, TJ = 70 5 VDS 5 V, VGS = 4.5 V 4 V nA A A VGS = 4.5 V, ID =0.9 0.216 0.270 VGS = 2.5V, ID =0.75 0.308 0.385 VDS =15 V, ID =0.9 Unit V 3 2 S 100 VDS = 15 V, VGS = 0 V, f = 1 MHz pF 30 20 VDS =15V ,VGS = 4.5 V , ID=0.9 VDS =15V ,VGS =2.5 V , ID=0.9 1.8 2.7 1.1 1.7 nC 0.4 0.6 f=1MHz VDD = 15V , RL = 22 , ID =0.68A , VGEN =4.5V , RG = 1 tf Continuous Source-Drain Diode Current Max 27.3 VDS = VGS, ID =250 A VDS = 0 V, VGS = Typ 30 ID= 250 A td(on) Turn-on time Min 1.5 2.3 10 15 30 45 5 25 10 15 0.31 TC = 25 ns A 4 IS = 0.28 A 0.8 1.2 V Body Diode Reverse Recovery Time trr 50 75 ns Body Diode Reverse Recovery Charge Qrr 105 160 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb * Pulse test: PW 300 ìs duty cycle IF=0.28A,di/dt=100A/ s,TJ=25 34 ns 16 ns 2%. Marking Marking KF http://www.twtysemi.com [email protected] 4008-318-123 2 of 2