KEXIN KI1304BDL

Transistors
IC
SMD Type
N-Channel 30-V (D-S) MOSFET
KI1304BDL
Features
TrenchFET Power MOSFET
100% Rg Tested
1 Gate
2 Source
3 Drain
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
VDS
30
V
Drain-source voltage
Gate-source voltage
12
V
ID
0.90
0.71
A
ID
0.85*1,2
0.68*1,2
A
VGS
Continuous drain current (TJ = 150 )
--
Tc=25
Tc=70
Continuous drain current (TJ = 150 )
--
Ta=25
Ta=70
Pulsed drain current
IDM
Continuous Source Drain Diode Current Tc=25
A
0.31
IS
A
0.28
Ta=25
Power dissipation
--
Tc=25
Tc=70
PD
0.37
0.24
W
Power dissipation
--
Ta=25
Ta=70
PD
0.34*1,2
0.22*1,2
W
Tj,Tstg
-55 to +150
Operating junction and storage temperature range
*1 Surface Mounted on 1" X 1" FR4 Board.
*2 t = 5 sec
Thermal Resistance Ratings Ta = 25
Parameter
Maximum Junction-to-Ambient*1,2
Maximum Junction-to-Foot (Drain)
t
5 sec
Steady State
Symbol
Typical
Maximum
RthJA
315
375
RthJF
285
340
Unit
/W
*1 Surface Mounted on 1" X 1" FR4 Board.
*2 Maximum under steady state conditions is 360
/W.
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1
Transistors
IC
SMD Type
KI1304BDL
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
VDS
VDS Temperature Coefficient
VDS/TJ
VGS(th) Temperature Coefficient
VGS(th)/TJ
Gate threshold voltage
VGS(th)
Gate-body leakage
IGSS
Zero gate voltage drain current
IDSS
On-state drain current
ID(on)
Drain-source on-state resistance
rDS(on)
Forward transconductance
gfs
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total gate charge *
Qg
Total gate charge *
Qg
Gate-source charge *
Qgs
Gate-drain charge *
Qgd
Gate Resistance
Rg
Testconditons
VGS = 0 V, ID = 250 A
tr
td(off)
Turn-off time
Continuous Source-Drain Diode Current
IS
ISM
Body Diode Voltage
VSD
0.6
1.3
100
12 V
1
VDS =30 V, VGS = 0 V, TJ = 70
5
5 V, VGS = 4.5 V
4
nA
A
A
VGS = 4.5 V, ID =0.9
0.216 0.270
VGS = 2.5V, ID =0.75
0.308 0.385
VDS =15 V, ID =0.9
V
2
S
100
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
30
20
VDS =15V ,VGS = 4.5 V , ID=0.9
VDS =15V ,VGS =2.5 V , ID=0.9
1.8
2.7
1.1
1.7
nC
0.4
0.6
f=1MHz
VDD = 15V , RL = 22 ,
ID =0.68A , VGEN =4.5V , RG = 1
1.5
2.3
10
15
30
45
5
25
10
15
0.31
TC = 25
ns
A
4
IS = 0.28 A
0.8
1.2
V
Body Diode Reverse Recovery Time
trr
50
75
ns
Body Diode Reverse Recovery Charge
Qrr
105
160
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
* Pulse test: PW
300 ìs duty cycle
Marking
Marking
2
mv/
VDS =30 V, VGS = 0 V
VDS
Unit
V
3
tf
Pulse Diode Forward Current*
Max
27.3
VDS = VGS, ID =250 A
VDS = 0 V, VGS =
Typ
30
ID= 250 A
td(on)
Turn-on time
Min
KF
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2%.
IF=0.28A,di/dt=100A/
s,TJ=25
34
ns
16
ns