Transistors IC MOSFET SMD Type Product specification KI2325DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 +0.1 2.4-0.1 Ultra Low On-Resistance 0.4 3 TrenchFET Power MOSFET 1 0.55 Small Size 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS -150 V Gate-Source Voltage VGS 20 V Continuous Drain Current(TJ=150 ) *1,2 TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current IDM -0.69 -0.55 -0.53 -0.43 A -0.6 A -1.6 -1.0 Continuous Source Current (diode conduction) *1,2 IS Single-Pluse Avalanche Current L = 1 0 mH IAS 4.5 Single-Pulse Avalanche Energy L = 1 0 mH EAS 1.01 1.25 0.8 A mJ 0.75 0.48 Power Dissipation *1 ,2 TA=25 -------------------------------------------------TA=70 PD Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 W *1 Surface Mounted on 1" X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Symbol t 5 sec Maximum Junction-to-Ambient Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit /W * Surface Mounted on 1" X 1" FR4 Board. http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 Transistors IC MOSFET SMD Type Product specification KI2325DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Testconditons Min V(BR)DSS VGS = 0 V, ID = -250 A Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(on) Drain-Source On-State Resistance * rDS(on) Max -150 VDS = VGS, ID = -250 ìA VDS = 0 V, VGS = Typ V -2.5 -4.5 20 V 100 VDS = -150V, VGS = 0 V -1 VDS = -150 V, VGS = 0 V, TJ = 55 -10 VDS -1.6 -15 V, VGS = -10V VGS = -10 V, ID = -0.5 A 1.0 1.2 1.05 1.3 Forward Transconductance * gfs VDS = -15 V, ID = -0.5 A 2.2 IS = -1.0 A, VGS = 0 V 0.7 -1.2 7.7 12 Diode Forward Voltage * VSD Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 16 td(on) 7 11 11 17 16 25 11 17 90 135 tr td(off) Turn-Off Time * Pulse test: PW 300 ìs duty cycle Qrr V nC 1.5 2.5 f = 1.0 MHz 9 340 VDS = -25V ,VGS = 0 , f = 1 MHz VDD = -75V , RL =75 , ID = -1A , VGEN =- 10V , RG = 6 tf Body Diode Reverse Recovery Charge A S Total Gate Charge Turn-On Time nA A VGS = -6.0 V, ID = -0.5 A VDS = -75V ,VGS = 10 V , ID= -0.5 A Unit IF = 0.5 A, di/dt = 100 A/ s 510 pF 30 ns nC 2%. Marking Marking D5 http://www.twtysemi.com [email protected] 4008-318-123 2 of 2