TYSEMI KI2314EDS

Transistors
IC
SMD Type
Product specification
KI2314EDS
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
ESD Protected: 3000 V
1
0.55
TrenchFET Power MOSFET
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150
)*1
TA = 25
ID
TA = 70
5secs
Steady State
20
4.9
3.77
3.9
3
IDM
15
L = 0.1 mH
IAS
15
Single Avalanche Energy
L = 0.1 mH
EAS
11.25
Continuous Source Current (Diode Conduction)*1
Power Dissipation *1
TA = 25
TA = 70
Operating Junction and Storage Temperature Range
A
1
IS
PD
V
12
Avalanche Current*2
Pulsed Drain Current
Unit
1.25
0.75
0.8
0.48
W
-55 to 150
TJ, Tstg
*1 Surface Mounted on 1"X 1" FR4 Board.
*2 Pulse width limited by maximum junction temperature.
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient *
Symbol
t
5 sec
RthJA
Steady-State
Maximum Junction-to-Foot (Drain)
Steady-State
RthJF
Typical
Maximum
75
100
120
166
40
50
Unit
/W
* Surface Mounted on 1"X 1" FR4 Board.
http://www.twtysemi.com
[email protected]
4008-318-123
1of 2
Transistors
IC
SMD Type
Product specification
KI2314EDS
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Min
Typ
Max
VGS = 0 V, ID = 250
A
20
V
VGS(th)
VDS = VGS, ID =250
A
0.45
V
IDSS
On-State Drain Current*
ID(on)
Drain Source On State Resistance*
rDS(on)
VDS = 0 V, VGS =
4.5 V
1.5
VDS =16V, VGS = 0 V
1
VDS = 16V, VGS = 0 V, TJ = 70
75
VDS
15
10 V, VGS = 4.5 V
A
VGS = 4.5 V, ID =5.0A
0.027
0.033
VGS = 2.5V, ID = 4.5A
0.033
0.040
VGS = 1.8V, ID =4.0A
0.042
0.051
gfs
VDS = 15V, ID = 5.0 A
40
Schottky Diode Forward Voltage*
VSD
IS = 1.0 A, VGS = 0 V
0.8
1.2
Total Gate Charge
Qg
11.0
14.0
VDS = 10 V, VGS = 4.5V, ID = 5.0 A
S
Qgs
Gate-Drain Charge
Qgd
2.1
Turn-On Delay Time
td(on)
0.53
0.8
tr
td(off)
Fall Time
tf
Source-Drain Reverse Recovery Time
trr
* Pulse test :Pulse width
VDD=10V,RL=10
,ID=1.0A,VGEN=4.5V,RG=6
IF = 1.0 A, di/dt = 100 A/
s
*
V
nC
Gate-Source Charge
Turn-Off Delay Time
A
A
Forward Transconductanceb
Rise Time
Unit
V(BR)DSS
IGSS
Zero Gate Voltage Drain Current
Testconditons
1.5
1.4
2.2
13.5
20
5.9
9
13
25
ns
ns
300 s,duty cycle 2%
Marking
Marking
C4
http://www.twtysemi.com
[email protected]
4008-318-123
2of 2