KEXIN KI2312DS

Transistors
SMD Type
N-Channel 20 -V (D-S) MOSFET
KI2312DS
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
0.4
3
RoHS Compliant
1
0.55
1.8-V Rated
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
1.
Gate
2.Emitter
2.
Source
3.
Drain
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
5 sec
Steady State
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
8
V
Continuous Drain Current (TJ=150 ) *2 TA=25
------------------------------------------------TA=70
ID
Pulsed Drain Current *2
4.9
3.9
3.77
3.0
A
IDM
15
A
Avalanche Current*2
L = 0.1 mH
IAS
15
A
Single Avalanche Energy
L = 0.1 mH
EAS
11.25
mJ
Continuous Source Current (diode conduction) *2
IS
1.0
A
Power Dissipation *2
TA=25
-------------------------------------------------TA=70
PD
Jumction Temperature and Storage Temperature
Tj.Tstg
1.25
0.8
0.75
0.48
W
-55 to 150
*1 Surface Mounted on 1”x 1”FR4 Board.
*2 Pulse width limited by maximum junction temperature
Thermal Resistance Ratings
Parameter
Symbol
5 sec
Maximum Junction-to-Ambient *
t
Maximum Junction-to-Ambient *
Steady State
Maximum Junction-to-Foot
Steady State
RthJA
RthJF
Typical
Maximum
75
100
120
166
40
50
Unit
/W
* Surface Mounted on 1”x 1”FR4 Board.
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1
Transistors
SMD Type
KI2312DS
Electrical Characteristics Ta = 25
Parameter
Symbol
V(BR)DSS VGS = 0 V, ID = 250 ìA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current
ID(on)
Drain-Source On-State Resistance *
rDS(on)
VDS = VGS, ID = 250 ìA
Min
Typ
Max
0.65
0.85
20
0.45
VDS = 0 V, VGS = 8 V
100
VDS = 20 V, VGS = 0 V
1
VDS = 20 V, VGS = 0 V, TJ = 70
75
VDS
10V, VGS = 4.5 V
15
0.027 0.033
VGS = 2.5 V, ID = 4.5A
0.033 0.040
VDS =1.8V, ID = 4.0 A
0.042 0.051
Forward Transconductance *
gfs
VDS =15V, ID = 5.0 A
40
VSD
IS =1.0 A, VGS = 0 V
0.8
1.2
Total Gate Charge
Qg
11.2
14
Qgs
Qgd
2.2
Turn-On Delay Time
td(on)
15
25
40
60
48
70
31
45
13
25
Turn-Off Delay Time
td(off)
Fall-Time
tf
Source-Drain Reverse Recovery Time
trr
*Pulse test: PW
300ìs duty cycle
Marking
Marking
C2
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2%.
IF=1.0A,di/dt=100A/ìs
V
nC
Gate-Source Charge
VDD =10V , RL = 10Ù ,
ID = 1A , VGEN =-4.5V , RG = 6Ù
A
S
Gate-Drain Charge
tr
nA
A
VGS = 4.5 V, ID = 5.0A
VDS = 10V ,VGS = 4.5 V , ID=5.0 A
Unit
V
Diode Forward Voltage *
Rise Time
2
Testconditons
1.4
ns