Transistors IC SMD Type N-Channel 100-V (D-S) MOSFET KI2328DS SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 1. Gate 2.Emitter 2. Source 3. Drain 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V Continuous Drain Current(TJ=150 ) *1 TA=25 ------------------------------------------------TA=70 ID Pulsed Drain Current *2 1.5 1.2 1.15 0.92 IDM 6 Single-Pluse Avalanche Current *2 L = 1 0 mH IAS 6 Single-Pulse Avalanche Energy L = 1 0 mH EAS 1.8 Continuous Source Current (Diode Conduction)*1 IS 0.6 Power Dissipation *1 TA=25 -------------------------------------------------TA=70 PD Jumction Temperature Tj 150 Storage Temperature Tstg -55 to +150 A A 1.25 0.8 mJ 0.75 0.47 W *1 Surface Mounted on 1" X 1" FR4 Board. *2 Pulse width limited by maximum junction temperature. Thermal Resistance Ratings Ta = 25 Parameter Maximum Junction-to-Ambient * Symbol t 5 sec Maximum Junction-to-Ambient Steady State Maximum Junction-to-Foot (Drain) Steady State RthJA RthJF Typical Maximum 80 100 130 170 45 55 Unit /W * Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Transistors IC SMD Type KI2328DS Electrical Characteristics Ta = 25 Parameter Symbol Drain-Source Breakdown Voltage Testconditons V(BR)DSS VGS = 0 V, ID =1 mA Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V, TJ = 70 75 ID(on) VDS VGS = 10 V, ID = 1.5 A Forward Transconductance * gfs VDS = 15 V, ID = 1.5 A Diode Forward Voltage * VSD IS = 1.0 A, VGS = 0 V Total Gate Charge Qg Gate-Source Charge Qgs 6 15 V, VGS = 10V 4 VDS = 50V ,VGS = 10 V , ID= 1.5 A * Pulse test: PW 300 ìs duty cycle Marking Marking 2 D8 www.kexin.com.cn 0.8 1.2 3.3 4.0 11 11 17 9 15 10 15 50 100 VDD = 50V , RL =33 , ID = 0.2A , VGEN =10V , RG = 6 IF = 1.5 A, di/dt = 100 A/ s V nC 0.47 7 Qrr 2%. S 1.45 tf Body Diode Reverse Recovery Charge A A Qgd td(off) nA 0.195 0.250 td(on) tr Turn-Off Time 100 1 rDS(on) Unit V 20 V Drain-Source On-State Resistance * Turn-On Time Max VDS = 80V, VGS = 0 V On-State Drain Current Gate-Drain Charge Typ 2 VDS = VGS, ID = 250 A VDS = 0 V, VGS = Min 100 ns nC