TYSEMI KI1563EDH

Transistors
IC
SMD Type
Product specification
KI1563EDH
SOT-363
Unit: mm
0.525
+0.1
1.3-0.1
0.65
+0.15
2.3-0.15
+0.1
1.25-0.1
Features
0.36
TrenchFET Power MOSFETs
+0.05
0.1-0.02
+0.05
0.95-0.05
0.1max
+0.1
0.3-0.1
+0.1
2.1-0.1
Absolute Maximum Ratings TA = 25
N-Channel
Symbol
Parameter
5 secs
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 150 )* TA = 25
Pulsed Drain Current
ID
0.92
TA = 25
PD
TA = 85
Operating Junction and Storage Temperature Range
-20
V
V
1.13
-1
0.81
-0.72
4
IS
Unit
Steady State
12
1.28
IDM
Maximum Power Dissipation*
5 secs
20
TA = 85
Continuous Source Current (Diode Conduction)*
P-Channel
Steady State
-0.88
A
-0.63
A
-3
A
0.61
0.48
-0.61
-0.48
A
0.74
0.57
0.3
0.57
W
0.38
0.3
0.16
0.3
W
-55 to 150
TJ, Tstg
*Surface Mounted on 1" X 1' FR4 Board.
Thermal Resistance Ratings TA = 25
Parameter
Maximum Junction-to-Ambient*
Symbol
t
5 sec
RthJA
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJF
Typical
Maximum
130
170
170
220
80
100
Unit
/W
*Surface Mounted on 1" X 1" FR4 Board.
http://www.twtysemi.com
[email protected]
4008-318-123
1 of 2
Transistors
IC
SMD Type
Product specification
KI1563EDH
Electrical Characteristics TJ = 25
Parameter
Testconditons
Symbol
VGS( th)
Gate Threshold Voltage
VDS = VGS, ID = 100 A
0.45
VDS = VGS, ID = -100
P-Ch
-0.45
A
VDS = 0 V VGS = 4.5V
Gate Body Leakage
IGSS
VDS = 0 V VGS = 12V
Zero Gate Voltage Drain Current
IDSS
ID(on)
On State Drain Current*
Drain Source On State Resistance*
rDS(on)
Forward Transconductance*
gfs
Diode Forward Voltage*
VSD
Total Gate Charge
Qg
Gate Source Charge
Qgs
Gate Drain Charge
Qgd
Turn On Time
td(on)
tr
Rise Time
Turn Off Delay Time
td( off)
Fall Time
* Pulse test; pulse width
tf
Min
N-Ch
Typ
Max
V
N-Ch
1
P-Ch
1
N-Ch
10
P-Ch
10
VDS = 16V, VGS = 0 V
N-Ch
1
VDS = -16V, VGS = 0 V
P-Ch
-1
VDS = 16 V, VGS = 0 V, TJ = 85
N-Ch
5
VDS = -16V, VGS = 0 V, TJ = 85
P-Ch
-5
VDS
5 V, VGS = 4.5 V
N-Ch
2
VDS
-5 V, VGS = -4.5 V
P-Ch
-2
A
mA
A
A
A
VGS = 4.5 V, ID = 1.13A
N-Ch
0.220 0.280
VGS = -4.5 V, ID = -0.88A
P-Ch
0.400 0.490
VGS = 2.5 V, ID = 0.99A
N-Ch
0.281 0.360
VGS = -2.5 V, ID = -0.71A
P-Ch
0.610 0.750
VGS = 1.8 V, ID = 0.2A
N-Ch
0.344 0.450
VGS = -1.8 V, ID = -0.20A
P-Ch
0.850
VDS = 10 V, ID = 1.13A
N-Ch
2.6
VDS = -10 V, ID = -0.88A
P-Ch
1.5
IS = 0.48A, VGS = 0 V
N-Ch
0.8
1.2
IS = -0.48A, VGS = 0 V
P-Ch
-0.8
-1.2
N-Channel
N-Ch
0.65
1.0
1.8
VDS = 10 V, VGS = 4.5V, ID = 1.13A
Unit
1.10
mS
P-Ch
1.2
N-Ch
0.2
P-Channel
P-Ch
0.3
VDS = -10 V, VGS = -4.5 V, ID = -0.88A
N-Ch
0.23
P-Ch
0.3
N Channel
N-Ch
45
70
VDD = 10 V, RL = 20
P-Ch
150
230
ID= 0.5 A, VGEN = 4.5V, Rg = 6
N-Ch
85
130
P-Ch
480
720
P-Channel
N-Ch
350
530
VDD = -10 V, RL = 20
P-Ch
840
1200
ID= -0.5 A, VGEN = -4.5 V, Rg = 6
N-Ch
210
320
P-Ch
850
1200
V
pC
ns
300 s, duty cycle 2%.
http://www.twtysemi.com
[email protected]
4008-318-123
2 of 2