SMD Type MOSFET IC IC IC IC SMD Type SMD Type Product specification KRF7476 PBF ■ Features ● VDS=15 V ● RDS(on)= 0.008Ω@VGS=4.5V ● RDS(on)= 0.03Ω @VGS=2.8 V A A D 1 8 S 2 7 D S 3 6 D G 4 5 D S T o p V ie w ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS ±12 V A Continuous Drain Current ID 15 Pulsed Drain Current IDM 120 A Maximum Power Dissipation PD 2.5 W RthJA 50 °C/W TJ, Tstg -55 to 150 ℃ Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range http://www.twtysemi.com [email protected] 4008-318-123 1 of 2 IC IC IC IC SMD Type SMD Type Product specification KRF7476 PBF ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain–Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate Threshold Voltage Gate-Body Leakage Drain-Source On-State Resistance * Min Typ Max 15 Unit V VDS = 9.6 V , VGS = 0V --- --- 100 VDS = 9.6V , VGS = 0V , TJ =125℃ --- --- 250 μA VGS(th) VDS = VGS , ID = 250uA 0.8 --- 2.5 V IGSS VDS = 0V , VGS = 12V --- --- 200 nA VGS = 4.5 V , ID =15 A --- 6.0 8.0 VGS =2.8 V , ID =12 A --- 12 30 --- --- 12 rDS(on) Avalanche Current Test conditions VGS = 0 V, ID = –250 μA I AR Forward Transconductance* gfs Total Gate Charge Qg Gate-Source Charge Qgs VDS = 6.0V , ID =11A VDS = 10 V , VGS =4.5 V , ID = 12 A 31 --- --- --- 26 40 --- 4.6 --- mΩ A S nc Gate-Drain Charge Qgd --- 11 --- Turn-On Delay Time td(on) --- 11 --- --- 29 --- --- 19 --- --- 8.3 --- --- 55 82 --- 2.5 --- A --- 0.87 1.2 V Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Continuous Source Current (Diode Conduction) Diode Forward Voltage* http://www.twtysemi.com VDD = 6.0V , ID =12 A VGS =4.5 V , RG = 1.8Ω IF = 12 A , di/dt = 100A/us IS VSD IS = 12 A, VGS = 0 V [email protected] 4008-318-123 ns ns 2 of 2